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Personal profile

Biography

Jakob (Jaap) joined the University of Huddersfield in October 2011 as a Research Professor, with his primary objective the re-establishment of the Medium Energy Ion Scattering (MEIS) Facility, formerly based at STFC Daresbury Laboratory within the International Institute for Accelerator Applications at Huddersfield. Officially reopened in 2015 after extensive upgrading, the MEIS laboratory under his charge, is now part of the UK National Ion Beam Centre, funded by EPSRC to provide analytical support to the UK research community.

After obtaining his Ir. degree in Applied Physics from the University of Groningen in the Netherlands, he moved to the UK to undertake postgraduate research in the Department of Department of Electronic and Electrical Engineering at the University of Salford, obtaining his PhD in 1979. Following an Adjunct Lectureship in Physics at the University of Arhus (DK) and a 6-year Senior Scientific Officer post in the Department of Chemistry at UMIST, he returned to the University of Salford as Lecturer in Electronic and Electrical Engineering, was later promoted Senior Lecturer and after moving to Physics, to Reader in Physics in 2000. In 2003 he became Professor of Ion Beam Physics at Salford where, from 2003 to 2007, he was also Head of Physics.

Research Expertise and Interests

  • Ranges, disorder formation & annealing of ultra-low energy implants into Si using medium energy ion scattering (MEIS).
  • The characterisation and metrology of dielectric nanometre films for microelectronic and optical applications using MEIS and related high depth resolution analytical techniques.
  • The evolution of the Cs build up in SIMS studied by MEIS
  • The characterisation of high current ion beam plasma using mass & energy analysis and Langmuir probe.
  • The application of in situ ion beam irradiation in the TEM.
  • Charge build-up and compensation studies in E beam ALM & equipment development

Research Expertise and Interests

  • Ion Beams
  • Materials Analysis
  • Modification
  • Low Energy Ion Scattering
  • Surface Analysis
  • Medium Energy Ion Scattering
  • Materials Characterisation
  • Ultra-Low Energy Ion Implantation
  • Shallow Doping

Fingerprint Dive into the research topics where Jaap Van Den Berg is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 1 Similar Profiles
ion scattering Physics & Astronomy
Ions Engineering & Materials Science
Scattering Engineering & Materials Science
Silicon Chemical Compounds
energy Physics & Astronomy
Secondary ion mass spectrometry Engineering & Materials Science
Ion beams Engineering & Materials Science
secondary ion mass spectrometry Physics & Astronomy

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Research Output 1979 2019

  • 92 Article
  • 8 Conference article
  • 3 Conference contribution
  • 1 Editorial
Open Access
File
ion scattering
Pulsed laser deposition
Oxide films
pulsed laser deposition
Transition metals
2 Citations (Scopus)

Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis

Van Den Berg, J. A., Rossall, A. K. & England, J., 22 Aug 2019, 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. Haublein, V. & Ryssel, H. (eds.). Institute of Electrical and Electronics Engineers Inc., Vol. 2018-September. p. 263-266 4 p. 8807964

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arsenic
ion scattering
arsenic
Doping (additives)
Scattering
1 Citation (Scopus)
Open Access
File
Arsenic
ion scattering
Silicon
arsenic
Doping (additives)
1 Citation (Scopus)
Open Access
File
Arsenic
ion scattering
arsenic
Doping (additives)
Scattering
15 Citations (Scopus)

Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Popovici, M., Groven, B., Marcoen, K., Phung, Q. M., Dutta, S., Swerts, J., Meersschaut, J., van den Berg, J. A., Franquet, A., Moussa, A., Vanstreels, K., Lagrain, P., Bender, H., Jurczak, M., Van Elshocht, S., Delabie, A. & Adelmann, C., 13 Jun 2017, In : Chemistry of Materials. 29, 11, p. 4654-4666 13 p.

Research output: Contribution to journalArticle

Ruthenium
Atomic layer deposition
Surface chemistry
Thin films
Surface reactions