Personal profile


Dr Jonathan Hinks received a Master of Physics from the University of Salford in 2003 before completing his PhD in Radiation Damage in Copper Indium Diselenide in 2007 under the supervision of Prof Stephen Donnelly. He was then appointed a Research Fellow and spent four years designing, building and operating the Microscope and Ion Accelerator for Materials Investigations (MIAMI) facility which incorporates a transmission electron microscope with an ion accelerator to allow dynamic radiation damage processes to be investigated at the nanoscale.

In 2011, the EMMA research group and MIAMI facility moved to the University of Huddersfield. Jonathan is now a Reader in Radiation Damage in Materials and is establishing a new state-of-the-art MIAMI-2 with £3.5M of funding from EPSRC.

Research Expertise and Interests

  • Nuclear materials
  • Semiconductors
  • Nanostructures
  • Materials in extraterrestrial environments

Research Degree Supervision

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Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

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Projects 2015 2018

Research Output 2012 2018

Fusion reactions
1 Citations

Effects of crystallographic and geometric orientation on ion beam sputtering of gold nanorods

Hinks, J., Hibberd, . F., Hattar, K., Ilinov, A., Bufford, D. C., Djurabekova, . F., Greaves, G., Kuronen, . A., Donnelly, S. & Nordlund, K. 11 Jan 2018 In : Scientific Reports. 8, 10 p.

Research output: Contribution to journalArticle

Open Access
ion beams
ion irradiation
4 Citations
Open Access
Ion bombardment
ion irradiation

Ion implantation in nanodiamonds: size effect and energy dependence

Shiryaev, A. A., Hinks, J. A., Marks, N. A., Greaves, G., Valencia, F. J., Donnelly, S. E., González, R. I., Kiwi, M., Trigub, A. L., Bringa, E. M., Fogg, J. L. & Vlasov, I. I. 23 Mar 2018 In : Scientific Reports. 8, 9 p., 5099

Research output: Contribution to journalArticle

Open Access
ion implantation
radiation tolerance
radioactive wastes

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Su, Q., Ding, H., Price, L., Shao, L., Hinks, J. A., Greaves, G., Donnelly, S. E., Demkowicz, M. J. & Nastasi, M. 22 Mar 2018 In : Scientific Reports. 8, 9 p., 5009

Research output: Contribution to journalArticle

Open Access
amorphous silicon