1.55 μm intersubband pumping of an In0.53Ga0.47As/AlAs: InP symmetric double quantum well terahertz laser

P. Harrison; R. W. Kelsall

doi:10.1016/S1386-9477(98)00096-4

1.55 μm intersubband pumping of an In_0.53Ga_0.47As/AlAs: InP symmetric double quantum well terahertz laser

P. Harrison, R. W. Kelsall

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The feasibility of intersubband optical excitation of a terahertz (1-10 THz) or far-infrared (30-300 μm) emitter/laser by a 1.55 μm laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The In_0.53Ga_0.47As/AlAs material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed.

Original language	English
Pages (from-to)	468-472
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(98)00096-4
Publication status	Published - 15 Jul 1998
Externally published	Yes

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title = "1.55 μm intersubband pumping of an In0.53Ga0.47As/AlAs: InP symmetric double quantum well terahertz laser",

abstract = "The feasibility of intersubband optical excitation of a terahertz (1-10 THz) or far-infrared (30-300 μm) emitter/laser by a 1.55 μm laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The In0.53Ga0.47As/AlAs material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed.",

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T1 - 1.55 μm intersubband pumping of an In0.53Ga0.47As/AlAs

T2 - InP symmetric double quantum well terahertz laser

AU - Harrison, P.

AU - Kelsall, R. W.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - The feasibility of intersubband optical excitation of a terahertz (1-10 THz) or far-infrared (30-300 μm) emitter/laser by a 1.55 μm laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The In0.53Ga0.47As/AlAs material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed.

AB - The feasibility of intersubband optical excitation of a terahertz (1-10 THz) or far-infrared (30-300 μm) emitter/laser by a 1.55 μm laser diode is investigated by means of envelope function/effective mass approximation and subband carrier lifetime calculations. The In0.53Ga0.47As/AlAs material system is employed in order to supply the necessary conduction band offset and the basic design is that of a 6-level symmetric double quantum well. This can simultaneously satisfy the criteria of an 800 meV intersubband absorption and a far-infrared emission. It is shown that these device designs can satisfy a necessary criterion for population inversion at room temperature. A scheme for improving the population ratio based on a 9-level triple quantum well is discussed.

KW - InGaAs

KW - Intersubband

KW - Terahertz laser

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U2 - 10.1016/S1386-9477(98)00096-4

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

ER -

1.55 μm intersubband pumping of an In_0.53Ga_0.47As/AlAs: InP symmetric double quantum well terahertz laser

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