1.55 μm intersubband pumping of an In_0.53Ga_0.47As/AlAs: InP symmetric double quantum well terahertz laser

Keyphrases

• Far-infrared 100%
• Terahertz Laser 100%
• Double Quantum Well 100%
• Intersubband 100%
• Optical Excitation 50%
• Room Temperature 50%
• Device Design 50%
• Material System 50%
• Ratio-based 50%
• Diode Laser 50%
• Lifetime Estimation 50%
• Population Proportion 50%
• Terahertz 50%
• Carrier Lifetime 50%
• Interband Absorption 50%
• Population Inversion 50%
• Envelope Function 50%
• Conduction Band Offset 50%
• Effective Mass Approximation 50%
• Triple Quantum Well 50%
• Nine-level 50%

Engineering

• Quantum Well 100%
• Terahertz 100%
• Room Temperature 33%
• Material System 33%
• Carrier Lifetime 33%
• Band Offset 33%
• Conduction Band 33%
• Envelope Function 33%
• Effective Mass Approximation 33%
• Population Inversion 33%