3-D Printed Microjet Impingement Cooling for Thermal Management of Ultrahigh-Power GaN Transistors

G. Zhang, J. W. Pomeroy, M. E. Navarro, H. Cao, M. Kuball, Y. Ding

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by ~60% with respect to GaN RF HEMTs mounted on conventional packaging.
Original languageEnglish
Article number9402857
Pages (from-to)748-754
Number of pages7
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume11
Issue number5
Early online date13 Apr 2021
DOIs
Publication statusPublished - 1 May 2021
Externally publishedYes

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