3-dimensional imaging of dislocation microstructures by electron beams

J. S. Barnard, J. H. Sharp, S. Hata, M. Mitsuhara, K. Kaneko, K. Higashida

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.

Original languageEnglish
Title of host publicationThree-Dimensional Tomography of Materials
EditorsC. Larabell
Number of pages11
ISBN (Print)9781627482325
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event2011 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20112 Dec 2011

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2011 MRS Fall Meeting
Country/TerritoryUnited States


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