A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

J. S. Gordon, D. G. Armour, S. E. Donnelly, J. A. van den Berg, D. Marton, J. W. Rabalais

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.

LanguageEnglish
Pages312-315
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume59-60
Issue numberPART 1
DOIs
Publication statusPublished - 1 Jul 1991
Externally publishedYes

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Epitaxial growth
epitaxy
Ion beams
ion beams
Semiconductor materials
Epitaxial layers
Ultrahigh vacuum
yield point
Fluxes
ultrahigh vacuum
energy

Cite this

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A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth. / Gordon, J. S.; Armour, D. G.; Donnelly, S. E.; van den Berg, J. A.; Marton, D.; Rabalais, J. W.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 59-60, No. PART 1, 01.07.1991, p. 312-315.

Research output: Contribution to journalArticle

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