TY - JOUR
T1 - A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth
AU - Gordon, J. S.
AU - Armour, D. G.
AU - Donnelly, S. E.
AU - van den Berg, J. A.
AU - Marton, D.
AU - Rabalais, J. W.
PY - 1991/7/1
Y1 - 1991/7/1
N2 - A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.
AB - A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.
UR - http://www.scopus.com/inward/record.url?scp=0039590002&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(91)95230-B
DO - 10.1016/0168-583X(91)95230-B
M3 - Article
AN - SCOPUS:0039590002
VL - 59-60
SP - 312
EP - 315
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - PART 1
ER -