A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

J. S. Gordon; D. G. Armour; S. E. Donnelly; J. A. van den Berg; D. Marton; J. W. Rabalais

doi:10.1016/0168-583X(91)95230-B

A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

J. S. Gordon, D. G. Armour, S. E. Donnelly, J. A. van den Berg, D. Marton, J. W. Rabalais

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm^-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.

Original language	English
Pages (from-to)	312-315
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	59-60
Issue number	PART 1
DOIs	https://doi.org/10.1016/0168-583X(91)95230-B
Publication status	Published - 1 Jul 1991
Externally published	Yes

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@article{f62bebb78fde4ae6b192fed86db0231c,

title = "A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth",

abstract = "A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.",

author = "Gordon, \{J. S.\} and Armour, \{D. G.\} and Donnelly, \{S. E.\} and \{van den Berg\}, \{J. A.\} and D. Marton and Rabalais, \{J. W.\}",

year = "1991",

month = jul,

day = "1",

doi = "10.1016/0168-583X(91)95230-B",

language = "English",

volume = "59-60",

pages = "312--315",

journal = "Nuclear Inst. and Methods in Physics Research, B",

issn = "0168-583X",

publisher = "Elsevier BV",

number = "PART 1",

}

TY - JOUR

T1 - A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

AU - Gordon, J. S.

AU - Armour, D. G.

AU - Donnelly, S. E.

AU - van den Berg, J. A.

AU - Marton, D.

AU - Rabalais, J. W.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.

AB - A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm-2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.

UR - https://www.scopus.com/pages/publications/0039590002

U2 - 10.1016/0168-583X(91)95230-B

DO - 10.1016/0168-583X(91)95230-B

M3 - Article

AN - SCOPUS:0039590002

SN - 0168-583X

VL - 59-60

SP - 312

EP - 315

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - PART 1

ER -

A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

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