A fixed-grid method for chemical etching

Y. C. Lam, J. C. Chai, P. Rath, H. Zheng, V. M. Murukeshan

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This paper presents a fixed-grid method for simulating chemical etching. This method is analogous to the enthalpy method used in the modeling of melting/solidification process. The total concentration of the etchant consists of two components: the unreacted etchant concentration and the reacted etchant concentration. The unreacted etchant concentration is solved in both the solution and the substrate (with zero unreacted etchant concentration). The reacted etchant concentration is used to capture the moving etch front of the solution-substrate interface. As the etch front is computed directly, there is no necessity to compute mesh velocity as for a moving grid approach, which changes a diffusion problem into a convective-diffusion problem. With the proposed approach, a diffusion problem remains a simple diffusion problem. In addition, by using a fixed grid, in contrast with a moving grid, Cartesian grid can be used to capture complicated etchfront in multi-dimensional problems. For illustration of the procedure, the proposed procedure is used to predict the etched front and etchant concentration in a one-dimensional diffusion-controlled etching problem.

Original languageEnglish
Pages (from-to)1123-1131
Number of pages9
JournalInternational Communications in Heat and Mass Transfer
Volume31
Issue number8
Early online date2 Oct 2004
DOIs
Publication statusPublished - Nov 2004
Externally publishedYes

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etchants
Etching
grids
etching
Substrates
Solidification
Enthalpy
Melting
solidification
mesh
enthalpy
melting

Cite this

Lam, Y. C. ; Chai, J. C. ; Rath, P. ; Zheng, H. ; Murukeshan, V. M. / A fixed-grid method for chemical etching. In: International Communications in Heat and Mass Transfer. 2004 ; Vol. 31, No. 8. pp. 1123-1131.
@article{d55daf9cae0c47a180f509302933ad10,
title = "A fixed-grid method for chemical etching",
abstract = "This paper presents a fixed-grid method for simulating chemical etching. This method is analogous to the enthalpy method used in the modeling of melting/solidification process. The total concentration of the etchant consists of two components: the unreacted etchant concentration and the reacted etchant concentration. The unreacted etchant concentration is solved in both the solution and the substrate (with zero unreacted etchant concentration). The reacted etchant concentration is used to capture the moving etch front of the solution-substrate interface. As the etch front is computed directly, there is no necessity to compute mesh velocity as for a moving grid approach, which changes a diffusion problem into a convective-diffusion problem. With the proposed approach, a diffusion problem remains a simple diffusion problem. In addition, by using a fixed grid, in contrast with a moving grid, Cartesian grid can be used to capture complicated etchfront in multi-dimensional problems. For illustration of the procedure, the proposed procedure is used to predict the etched front and etchant concentration in a one-dimensional diffusion-controlled etching problem.",
author = "Lam, {Y. C.} and Chai, {J. C.} and P. Rath and H. Zheng and Murukeshan, {V. M.}",
year = "2004",
month = "11",
doi = "10.1016/j.icheatmasstransfer.2004.08.010",
language = "English",
volume = "31",
pages = "1123--1131",
journal = "International Communications in Heat and Mass Transfer",
issn = "0735-1933",
publisher = "Elsevier Limited",
number = "8",

}

A fixed-grid method for chemical etching. / Lam, Y. C.; Chai, J. C.; Rath, P.; Zheng, H.; Murukeshan, V. M.

In: International Communications in Heat and Mass Transfer, Vol. 31, No. 8, 11.2004, p. 1123-1131.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A fixed-grid method for chemical etching

AU - Lam, Y. C.

AU - Chai, J. C.

AU - Rath, P.

AU - Zheng, H.

AU - Murukeshan, V. M.

PY - 2004/11

Y1 - 2004/11

N2 - This paper presents a fixed-grid method for simulating chemical etching. This method is analogous to the enthalpy method used in the modeling of melting/solidification process. The total concentration of the etchant consists of two components: the unreacted etchant concentration and the reacted etchant concentration. The unreacted etchant concentration is solved in both the solution and the substrate (with zero unreacted etchant concentration). The reacted etchant concentration is used to capture the moving etch front of the solution-substrate interface. As the etch front is computed directly, there is no necessity to compute mesh velocity as for a moving grid approach, which changes a diffusion problem into a convective-diffusion problem. With the proposed approach, a diffusion problem remains a simple diffusion problem. In addition, by using a fixed grid, in contrast with a moving grid, Cartesian grid can be used to capture complicated etchfront in multi-dimensional problems. For illustration of the procedure, the proposed procedure is used to predict the etched front and etchant concentration in a one-dimensional diffusion-controlled etching problem.

AB - This paper presents a fixed-grid method for simulating chemical etching. This method is analogous to the enthalpy method used in the modeling of melting/solidification process. The total concentration of the etchant consists of two components: the unreacted etchant concentration and the reacted etchant concentration. The unreacted etchant concentration is solved in both the solution and the substrate (with zero unreacted etchant concentration). The reacted etchant concentration is used to capture the moving etch front of the solution-substrate interface. As the etch front is computed directly, there is no necessity to compute mesh velocity as for a moving grid approach, which changes a diffusion problem into a convective-diffusion problem. With the proposed approach, a diffusion problem remains a simple diffusion problem. In addition, by using a fixed grid, in contrast with a moving grid, Cartesian grid can be used to capture complicated etchfront in multi-dimensional problems. For illustration of the procedure, the proposed procedure is used to predict the etched front and etchant concentration in a one-dimensional diffusion-controlled etching problem.

UR - http://www.scopus.com/inward/record.url?scp=4744348259&partnerID=8YFLogxK

U2 - 10.1016/j.icheatmasstransfer.2004.08.010

DO - 10.1016/j.icheatmasstransfer.2004.08.010

M3 - Article

VL - 31

SP - 1123

EP - 1131

JO - International Communications in Heat and Mass Transfer

JF - International Communications in Heat and Mass Transfer

SN - 0735-1933

IS - 8

ER -