A High Efficiency Class-F Power Amplifier Design Technique

In this article, a medium power pseudomorphic HEMT device is used in the design of a high efficiency class-F power amplifier (PA) operating at 900 MHz. The purpose of this article is to describe the design procedure of a class-F PA with a very low drain bias voltage (V _ds). The realized PA achieves a peak power-added efficiency (PAE) of 71.4 percent with a 22 dBm output power (P _out) and a 14 dB power gain (G _p) (2.3 dB compression) at V _ds=3 V and 8 dBm input power (P _in). A PAE of above 60 percent is attained over a frequency range of 850 to 970 MHz (13 percent BW).