A new approch to study the damage induced by inert gases implantation in silicon

S. Peripolli, M. F. Beaufort, D. Babonneau, S. Rousselet, P. F.P. Fichtner, L. Amaral, E. Oliviero, J. F. Barbot, S. E. Donnelly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

LanguageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
PublisherTrans Tech Publications Ltd
Pages357-362
Number of pages6
ISBN (Print)3908451132, 9783908451136
Publication statusPublished - 2005
Externally publishedYes
Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, France
Duration: 25 Sep 200530 Sep 2005

Publication series

NameSolid State Phenomena
Volume108-109
ISSN (Print)1012-0394

Conference

Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
CountryFrance
CityGiens
Period25/09/0530/09/05

Fingerprint

Noble Gases
Silicon
Inert gases
rare gases
implantation
damage
silicon
bubbles
X ray scattering
Ion implantation
Transmission electron microscopy
grazing incidence
Temperature
Defects
fluence
Substrates
incidence
intervals
transmission electron microscopy
temperature

Cite this

Peripolli, S., Beaufort, M. F., Babonneau, D., Rousselet, S., Fichtner, P. F. P., Amaral, L., ... Donnelly, S. E. (2005). A new approch to study the damage induced by inert gases implantation in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting (pp. 357-362). (Solid State Phenomena; Vol. 108-109). Trans Tech Publications Ltd.
Peripolli, S. ; Beaufort, M. F. ; Babonneau, D. ; Rousselet, S. ; Fichtner, P. F.P. ; Amaral, L. ; Oliviero, E. ; Barbot, J. F. ; Donnelly, S. E. / A new approch to study the damage induced by inert gases implantation in silicon. Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. pp. 357-362 (Solid State Phenomena).
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abstract = "In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.",
keywords = "Helium, Ion implantation, Nanocavities, Neon, Silicon",
author = "S. Peripolli and Beaufort, {M. F.} and D. Babonneau and S. Rousselet and Fichtner, {P. F.P.} and L. Amaral and E. Oliviero and Barbot, {J. F.} and Donnelly, {S. E.}",
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language = "English",
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Peripolli, S, Beaufort, MF, Babonneau, D, Rousselet, S, Fichtner, PFP, Amaral, L, Oliviero, E, Barbot, JF & Donnelly, SE 2005, A new approch to study the damage induced by inert gases implantation in silicon. in Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Solid State Phenomena, vol. 108-109, Trans Tech Publications Ltd, pp. 357-362, 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, France, 25/09/05.

A new approch to study the damage induced by inert gases implantation in silicon. / Peripolli, S.; Beaufort, M. F.; Babonneau, D.; Rousselet, S.; Fichtner, P. F.P.; Amaral, L.; Oliviero, E.; Barbot, J. F.; Donnelly, S. E.

Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. p. 357-362 (Solid State Phenomena; Vol. 108-109).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A new approch to study the damage induced by inert gases implantation in silicon

AU - Peripolli, S.

AU - Beaufort, M. F.

AU - Babonneau, D.

AU - Rousselet, S.

AU - Fichtner, P. F.P.

AU - Amaral, L.

AU - Oliviero, E.

AU - Barbot, J. F.

AU - Donnelly, S. E.

PY - 2005

Y1 - 2005

N2 - In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

AB - In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

KW - Helium

KW - Ion implantation

KW - Nanocavities

KW - Neon

KW - Silicon

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M3 - Conference contribution

SN - 3908451132

SN - 9783908451136

T3 - Solid State Phenomena

SP - 357

EP - 362

BT - Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting

PB - Trans Tech Publications Ltd

ER -

Peripolli S, Beaufort MF, Babonneau D, Rousselet S, Fichtner PFP, Amaral L et al. A new approch to study the damage induced by inert gases implantation in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd. 2005. p. 357-362. (Solid State Phenomena).