A new approch to study the damage induced by inert gases implantation in silicon

S. Peripolli, M. F. Beaufort, D. Babonneau, S. Rousselet, P. F.P. Fichtner, L. Amaral, E. Oliviero, J. F. Barbot, S. E. Donnelly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
PublisherTrans Tech Publications Ltd
Pages357-362
Number of pages6
ISBN (Print)3908451132, 9783908451136
Publication statusPublished - 2005
Externally publishedYes
Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy - Giens, France
Duration: 25 Sep 200530 Sep 2005
Conference number: 11

Publication series

NameSolid State Phenomena
Volume108-109
ISSN (Print)1012-0394

Conference

Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy
Abbreviated titleGADEST 2005
CountryFrance
CityGiens
Period25/09/0530/09/05

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Peripolli, S., Beaufort, M. F., Babonneau, D., Rousselet, S., Fichtner, P. F. P., Amaral, L., ... Donnelly, S. E. (2005). A new approch to study the damage induced by inert gases implantation in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting (pp. 357-362). (Solid State Phenomena; Vol. 108-109). Trans Tech Publications Ltd.