A new approch to study the damage induced by inert gases implantation in silicon

S. Peripolli; M. F. Beaufort; D. Babonneau; S. Rousselet; P. F.P. Fichtner; L. Amaral; E. Oliviero; J. F. Barbot; S. E. Donnelly

A new approch to study the damage induced by inert gases implantation in silicon

S. Peripolli, M. F. Beaufort, D. Babonneau, S. Rousselet, P. F.P. Fichtner, L. Amaral, E. Oliviero, J. F. Barbot, S. E. Donnelly

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne ⁺-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×10¹⁶ cm^-2, for distinct implantation temperatures within the 250°C≤T_i≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
Publisher	Trans Tech Publications Ltd
Pages	357-362
Number of pages	6
ISBN (Print)	3908451132, 9783908451136
Publication status	Published - 2005
Externally published	Yes
Event	11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy - Giens, France Duration: 25 Sept 2005 → 30 Sept 2005 Conference number: 11

Publication series

Name	Solid State Phenomena
Volume	108-109
ISSN (Print)	1012-0394

Conference

Conference	11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy
Abbreviated title	GADEST 2005
Country/Territory	France
City	Giens
Period	25/09/05 → 30/09/05

Cite this

Peripolli, S., Beaufort, M. F., Babonneau, D., Rousselet, S., Fichtner, P. F. P., Amaral, L., Oliviero, E., Barbot, J. F., & Donnelly, S. E. (2005). A new approch to study the damage induced by inert gases implantation in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting (pp. 357-362). (Solid State Phenomena; Vol. 108-109). Trans Tech Publications Ltd.

@inproceedings{433655a49f534c4e8c9c4bf1afdb83ed,

title = "A new approch to study the damage induced by inert gases implantation in silicon",

abstract = "In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.",

keywords = "Helium, Ion implantation, Nanocavities, Neon, Silicon",

author = "S. Peripolli and Beaufort, \{M. F.\} and D. Babonneau and S. Rousselet and Fichtner, \{P. F.P.\} and L. Amaral and E. Oliviero and Barbot, \{J. F.\} and Donnelly, \{S. E.\}",

year = "2005",

language = "English",

isbn = "3908451132",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "357--362",

booktitle = "Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting",

address = "Switzerland",

note = "11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 ; Conference date: 25-09-2005 Through 30-09-2005",

}

Peripolli, S, Beaufort, MF, Babonneau, D, Rousselet, S, Fichtner, PFP, Amaral, L, Oliviero, E, Barbot, JF & Donnelly, SE 2005, A new approch to study the damage induced by inert gases implantation in silicon. in Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Solid State Phenomena, vol. 108-109, Trans Tech Publications Ltd, pp. 357-362, 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, Giens, France, 25/09/05.

A new approch to study the damage induced by inert gases implantation in silicon. / Peripolli, S.; Beaufort, M. F.; Babonneau, D. et al.
Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd, 2005. p. 357-362 (Solid State Phenomena; Vol. 108-109).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A new approch to study the damage induced by inert gases implantation in silicon

AU - Peripolli, S.

AU - Beaufort, M. F.

AU - Babonneau, D.

AU - Rousselet, S.

AU - Fichtner, P. F.P.

AU - Amaral, L.

AU - Oliviero, E.

AU - Barbot, J. F.

AU - Donnelly, S. E.

N1 - Conference code: 11

PY - 2005

Y1 - 2005

N2 - In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

AB - In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne +-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5×1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS) measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

KW - Helium

KW - Ion implantation

KW - Nanocavities

KW - Neon

KW - Silicon

UR - https://www.scopus.com/pages/publications/34248375244

UR - https://www.amazon.co.uk/Gettering-Defect-Engineering-Semiconductor-Technology/dp/3908451132/ref=sr_1_1?keywords=9783908451136&qid=1553683332&s=gateway&sr=8-1

M3 - Conference contribution

AN - SCOPUS:34248375244

SN - 3908451132

SN - 9783908451136

T3 - Solid State Phenomena

SP - 357

EP - 362

BT - Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting

PB - Trans Tech Publications Ltd

T2 - 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy

Y2 - 25 September 2005 through 30 September 2005

ER -

Peripolli S, Beaufort MF, Babonneau D, Rousselet S, Fichtner PFP, Amaral L et al. A new approch to study the damage induced by inert gases implantation in silicon. In Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting. Trans Tech Publications Ltd. 2005. p. 357-362. (Solid State Phenomena).

A new approch to study the damage induced by inert gases implantation in silicon

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