A new low-energy ion implanter for bombardment of cylindrical surfaces

M. Renier, A. A. Lucas, S. E. Donnelly

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An ion implanter of cylindrical geometry is described suitable for uniform implantation at a few keV of inert gas ions of narrow energy distribution into conducting targets of axial symmetry. For helium implantation the ion current in the present device can easily be maintained at over 1 mA, allowing high dose implantation of large areas (several tens of cm2) in minutes. For temperature control of the target, a thermal shunt is incorporated. The sizes and the implantation energy of the device are scalable. Reactive gases can also be implanted with the device when operated at lower pressures and ion currents.

LanguageEnglish
Pages577-578
Number of pages2
JournalVacuum
Volume35
Issue number12
DOIs
Publication statusPublished - 1 Dec 1985
Externally publishedYes

Fingerprint

bombardment
implantation
Ions
Ion implantation
ion currents
ions
Noble Gases
Helium
energy
temperature control
shunts
Inert gases
Temperature control
rare gases
energy distribution
low pressure
Gases
helium
conduction
dosage

Cite this

Renier, M. ; Lucas, A. A. ; Donnelly, S. E. / A new low-energy ion implanter for bombardment of cylindrical surfaces. In: Vacuum. 1985 ; Vol. 35, No. 12. pp. 577-578.
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A new low-energy ion implanter for bombardment of cylindrical surfaces. / Renier, M.; Lucas, A. A.; Donnelly, S. E.

In: Vacuum, Vol. 35, No. 12, 01.12.1985, p. 577-578.

Research output: Contribution to journalArticle

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