A Possible Mechanism for Electron‐Bombardment‐Induced Loop Punching in Helium‐Implanted Materials

S. E. Donnelly, A. A. Lucas, Ph Lambin, J. P. Vigneron

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The recently proposed mechanism for the punching of dislocation loops by overpressurized helium bubbles in molybdenum is studied quantitatively. According to this mechanism, under the electron beam of the transmission microscope, He atoms are excited or ionized and the resulting excited species (excited He atoms and free electrons) are responsible for the pressure rise in the gas beyond the threshold for loop punching. In the model, the pressure increase is attributed to EL reduction of the effective volume accessible to the gas due to the formation of a cavity around each excited species. The radius of this cavity is evaluated and, also, the excited fraction required to reach the threshold is discussed in terms of excitation life times.

LanguageEnglish
Pages543-548
Number of pages6
Journalphysica status solidi (a)
Volume79
Issue number2
DOIs
Publication statusPublished - 16 Oct 1983
Externally publishedYes

Fingerprint

Helium
Punching
electron bombardment
Gases
helium
Atoms
cavities
thresholds
Molybdenum
Electrons
gases
free electrons
molybdenum
atoms
Electron beams
Microscopes
bubbles
microscopes
electron beams
life (durability)

Cite this

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abstract = "The recently proposed mechanism for the punching of dislocation loops by overpressurized helium bubbles in molybdenum is studied quantitatively. According to this mechanism, under the electron beam of the transmission microscope, He atoms are excited or ionized and the resulting excited species (excited He atoms and free electrons) are responsible for the pressure rise in the gas beyond the threshold for loop punching. In the model, the pressure increase is attributed to EL reduction of the effective volume accessible to the gas due to the formation of a cavity around each excited species. The radius of this cavity is evaluated and, also, the excited fraction required to reach the threshold is discussed in terms of excitation life times.",
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A Possible Mechanism for Electron‐Bombardment‐Induced Loop Punching in Helium‐Implanted Materials. / Donnelly, S. E.; Lucas, A. A.; Lambin, Ph; Vigneron, J. P.

In: physica status solidi (a), Vol. 79, No. 2, 16.10.1983, p. 543-548.

Research output: Contribution to journalArticle

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