A model for calculating the current and spin polarization in a double-barrier InGaAs resonant tunnelling structure is described with the aim to account for phase-breaking scattering. It is based on the nonequilibrium Green's function method with both elastic and inelastic (LO-phonon) scattering described within the self-consistent first Born approximation. It has been found that the maximum current spin polarization of around 0.4 in the ballistic limit decreases to around 0.1 for scattering transport with scattering-induced broadening of quasi-bound states of around 4meV.
|Number of pages||5|
|Journal||Journal of Physics: Conference Series|
|Early online date||4 Aug 2010|
|Publication status||Published - 4 Aug 2010|
|Event||2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors - St William's College , York, United Kingdom|
Duration: 13 Jan 2010 → 15 Jan 2010
Conference number: 2