Abstract
A model for calculating the current and spin polarization in a double-barrier InGaAs resonant tunnelling structure is described with the aim to account for phase-breaking scattering. It is based on the nonequilibrium Green's function method with both elastic and inelastic (LO-phonon) scattering described within the self-consistent first Born approximation. It has been found that the maximum current spin polarization of around 0.4 in the ballistic limit decreases to around 0.1 for scattering transport with scattering-induced broadening of quasi-bound states of around 4meV.
Original language | English |
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Article number | 012008 |
Number of pages | 5 |
Journal | Journal of Physics: Conference Series |
Volume | 242 |
Early online date | 4 Aug 2010 |
DOIs | |
Publication status | Published - 4 Aug 2010 |
Externally published | Yes |
Event | 2nd Workshop on Theory, Modelling and Computational Methods for Semiconductors - St William's College , York, United Kingdom Duration: 13 Jan 2010 → 15 Jan 2010 Conference number: 2 https://iopscience.iop.org/issue/1742-6596/242/1 |