A silicon MBE-compatible low-energy ion implanter

J. S. Gordon, A. Bousetta, J. A. van den Berg, D. G. Armour, R. Kubiak, E. H.C. Parker

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Abstract

The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.

Original languageEnglish
Pages (from-to)314-317
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume55
Issue number1-4
DOIs
Publication statusPublished - 2 Apr 1991
Externally publishedYes

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