Abstract
The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.
| Original language | English |
|---|---|
| Pages (from-to) | 314-317 |
| Number of pages | 4 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 55 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2 Apr 1991 |
| Externally published | Yes |
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A silicon MBE-compatible low-energy ion implanter. / Gordon, J. S.; Bousetta, A.; van den Berg, J. A.; Armour, D. G.; Kubiak, R.; Parker, E. H.C.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 55, No. 1-4, 02.04.1991, p. 314-317.Research output: Contribution to journal › Article
TY - JOUR
T1 - A silicon MBE-compatible low-energy ion implanter
AU - Gordon, J. S.
AU - Bousetta, A.
AU - van den Berg, J. A.
AU - Armour, D. G.
AU - Kubiak, R.
AU - Parker, E. H.C.
PY - 1991/4/2
Y1 - 1991/4/2
N2 - The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.
AB - The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.
UR - http://www.scopus.com/inward/record.url?scp=0041504630&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(91)96184-M
DO - 10.1016/0168-583X(91)96184-M
M3 - Article
AN - SCOPUS:0041504630
VL - 55
SP - 314
EP - 317
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -