A silicon MBE-compatible low-energy ion implanter

J. S. Gordon; A. Bousetta; J. A. van den Berg; D. G. Armour; R. Kubiak; E. H.C. Parker

doi:10.1016/0168-583X(91)96184-M

A silicon MBE-compatible low-energy ion implanter

J. S. Gordon, A. Bousetta, J. A. van den Berg, D. G. Armour, R. Kubiak, E. H.C. Parker

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 10²⁰ cm^-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm^- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.

Original language	English
Pages (from-to)	314-317
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96184-M
Publication status	Published - 2 Apr 1991
Externally published	Yes

Access to Document

10.1016/0168-583X(91)96184-M

Link to publication in Scopus

Fingerprint Dive into the research topics of 'A silicon MBE-compatible low-energy ion implanter'. Together they form a unique fingerprint.

Cite this

Gordon, J. S., Bousetta, A., van den Berg, J. A., Armour, D. G., Kubiak, R., & Parker, E. H. C. (1991). A silicon MBE-compatible low-energy ion implanter. Nuclear Inst. and Methods in Physics Research, B, 55(1-4), 314-317. https://doi.org/10.1016/0168-583X(91)96184-M

@article{5e69ea8548074e519382efda186c99d7,

title = "A silicon MBE-compatible low-energy ion implanter",

abstract = "The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.",

author = "Gordon, {J. S.} and A. Bousetta and {van den Berg}, {J. A.} and Armour, {D. G.} and R. Kubiak and Parker, {E. H.C.}",

year = "1991",

month = apr,

day = "2",

doi = "10.1016/0168-583X(91)96184-M",

language = "English",

volume = "55",

pages = "314--317",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - A silicon MBE-compatible low-energy ion implanter

AU - Gordon, J. S.

AU - Bousetta, A.

AU - van den Berg, J. A.

AU - Armour, D. G.

AU - Kubiak, R.

AU - Parker, E. H.C.

PY - 1991/4/2

Y1 - 1991/4/2

N2 - The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.

AB - The design of an ion implanter for the doping of shallow layers grown by silicon molecular beam epitaxy to a concentration 1020 cm-3 or higher is described. This requires a capability to deliver beams into the UHV growth chamber with ion energies in the range 500 eV down to 50 eV and lower, fluxes in the range 1 to 50 μA cm- and uniformity over a 100 mm diameter wafer. The instrument has been designed to operate simultaneously with the MBE growth process, without having to compromise the latter. The practical problems which arise from attaching to an existing silicon MBE installation in which the position, electrical potential and environment of the target are predetermined have also influenced the final design.

UR - http://www.scopus.com/inward/record.url?scp=0041504630&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(91)96184-M

DO - 10.1016/0168-583X(91)96184-M

M3 - Article

AN - SCOPUS:0041504630

VL - 55

SP - 314

EP - 317

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -