A simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our calculated value for the hole energy splitting between ground and first excited state is in excellent agreement with that deduced from capacitance and photoluminescence measurements.
|Materials Research Society Symposium - Proceedings
|Published - 1 Mar 2001
|Semiconductor Quantum Dots II: Symposium J - Boston, United States
Duration: 27 Nov 2000 → 30 Nov 2000