A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

M. Califano; P. Harrison

doi:10.1557/PROC-642-J1.4.1

A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

M. Califano, P. Harrison

Research output: Contribution to journal › Conference article › peer-review

Abstract

A simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our calculated value for the hole energy splitting between ground and first excited state is in excellent agreement with that deduced from capacitance and photoluminescence measurements.

Original language	English
Article number	141
Journal	Materials Research Society Symposium - Proceedings
Volume	642
DOIs	https://doi.org/10.1557/PROC-642-J1.4.1
Publication status	Published - 1 Mar 2001
Externally published	Yes
Event	Semiconductor Quantum Dots II: Symposium J - Boston, United States Duration: 27 Nov 2000 → 30 Nov 2000

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title = "A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots",

abstract = "A simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our calculated value for the hole energy splitting between ground and first excited state is in excellent agreement with that deduced from capacitance and photoluminescence measurements.",

keywords = "Band structure, Capacitance measurement, Eigenvalues and eigenfunctions, Electronic structure, Ground state, Numerical methods, Photoluminescence, Semiconducting gallium arsenide, Semiconducting indium compounds",

author = "M. Califano and P. Harrison",

year = "2001",

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day = "1",

doi = "10.1557/PROC-642-J1.4.1",

language = "English",

volume = "642",

journal = "MRS Online Proceedings Library",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Semiconductor Quantum Dots II : Symposium J ; Conference date: 27-11-2000 Through 30-11-2000",

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TY - JOUR

T1 - A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

AU - Califano, M.

AU - Harrison, P.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - A simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our calculated value for the hole energy splitting between ground and first excited state is in excellent agreement with that deduced from capacitance and photoluminescence measurements.

AB - A simple and versatile numerical method for electronic structure calculations in InAs pyramidal dots is presented, and its predictions compared with both theoretical and experimental data. The calculated ground state energy eigenvalues agree well with those of more sophisticated treatments which take into account band mixing and the microscopic effects of the strain distribution. The number of electron bound states predicted is in excellent agreement with very recent calculations for strained quantum dots performed in the framework of the 8-band k · p theory. Very good agreement is obtained with both the number and the energy of the peaks in several experimental photoluminescence spectra. Furthermore our calculated value for the hole energy splitting between ground and first excited state is in excellent agreement with that deduced from capacitance and photoluminescence measurements.

KW - Band structure

KW - Capacitance measurement

KW - Eigenvalues and eigenfunctions

KW - Electronic structure

KW - Ground state

KW - Numerical methods

KW - Photoluminescence

KW - Semiconducting gallium arsenide

KW - Semiconducting indium compounds

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U2 - 10.1557/PROC-642-J1.4.1

DO - 10.1557/PROC-642-J1.4.1

M3 - Conference article

AN - SCOPUS:0035557690

VL - 642

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 0272-9172

M1 - 141

T2 - Semiconductor Quantum Dots II

Y2 - 27 November 2000 through 30 November 2000

ER -

A Single-Band Constant-Confining-Potential Model for Self-Assembled InAs/GaAs Quantum Dots

Abstract

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