A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC

C. H. Zhang, S. E. Donnelly, V. M. Vishnyakov, J. H. Evans, T. Shibayama, Y. M. Sun

Research output: Contribution to journalConference article

25 Citations (Scopus)

Abstract

In this work, the annealing behavior of microstructures in 4H-SiC helium-implanted at about 500 K to moderate doses (2.5-5)×1016 ionscm-2 is studied by combining transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is found that a low concentration of planar clusters of helium bubbles in ring structures was formed in a narrow range of dose in a well-defined depth region of the specimens on annealing above 973 K. The formation of the bubble layer is associated with remarkable distortion and deformation in the matrix. A simple model based on the frozen matrix assumption was developed to study the production of defects in SiC below the temperature of vacancy mobility. We found that the main features of the depth distribution of the bubble layer can be understood using this model if assuming the planar clusters of bubbles evolve from vacancy clusters larger than a critical size through an intermediate stage of helium platelets.

Original languageEnglish
Pages (from-to)53-60
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume218
Issue number1-4
DOIs
Publication statusPublished - Jun 2004
Externally publishedYes
Event12th International Conference on Radiation - Gramado, Brazil
Duration: 31 Aug 20035 Sep 2003
Conference number: 12

Fingerprint

Helium
bubbles
helium
cavities
Vacancies
Annealing
Rutherford backscattering spectroscopy
Platelets
dosage
Spectrometry
annealing
ring structures
matrices
platelets
Transmission electron microscopy
low concentrations
backscattering
Defects
Microstructure
transmission electron microscopy

Cite this

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title = "A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC",
abstract = "In this work, the annealing behavior of microstructures in 4H-SiC helium-implanted at about 500 K to moderate doses (2.5-5)×1016 ionscm-2 is studied by combining transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is found that a low concentration of planar clusters of helium bubbles in ring structures was formed in a narrow range of dose in a well-defined depth region of the specimens on annealing above 973 K. The formation of the bubble layer is associated with remarkable distortion and deformation in the matrix. A simple model based on the frozen matrix assumption was developed to study the production of defects in SiC below the temperature of vacancy mobility. We found that the main features of the depth distribution of the bubble layer can be understood using this model if assuming the planar clusters of bubbles evolve from vacancy clusters larger than a critical size through an intermediate stage of helium platelets.",
keywords = "4H-SiC, Bubbles, Helium, Modeling, RBS-channeling, TEM",
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A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC. / Zhang, C. H.; Donnelly, S. E.; Vishnyakov, V. M.; Evans, J. H.; Shibayama, T.; Sun, Y. M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 218, No. 1-4, 06.2004, p. 53-60.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC

AU - Zhang, C. H.

AU - Donnelly, S. E.

AU - Vishnyakov, V. M.

AU - Evans, J. H.

AU - Shibayama, T.

AU - Sun, Y. M.

PY - 2004/6

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AB - In this work, the annealing behavior of microstructures in 4H-SiC helium-implanted at about 500 K to moderate doses (2.5-5)×1016 ionscm-2 is studied by combining transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is found that a low concentration of planar clusters of helium bubbles in ring structures was formed in a narrow range of dose in a well-defined depth region of the specimens on annealing above 973 K. The formation of the bubble layer is associated with remarkable distortion and deformation in the matrix. A simple model based on the frozen matrix assumption was developed to study the production of defects in SiC below the temperature of vacancy mobility. We found that the main features of the depth distribution of the bubble layer can be understood using this model if assuming the planar clusters of bubbles evolve from vacancy clusters larger than a critical size through an intermediate stage of helium platelets.

KW - 4H-SiC

KW - Bubbles

KW - Helium

KW - Modeling

KW - RBS-channeling

KW - TEM

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M3 - Conference article

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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