A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC

C. H. Zhang, S. E. Donnelly, V. M. Vishnyakov, J. H. Evans, T. Shibayama, Y. M. Sun

Research output: Contribution to journalConference articlepeer-review

29 Citations (Scopus)

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Engineering & Materials Science

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