@inproceedings{fd4ba0332d96467d96861b2f95b70997,
title = "A Superlattice Barrier Based Quantum Well Infrared Photodetector With Maximum Sensitivity at MidInfrared Wavelengths",
abstract = "Quantum well infrared photodetectors based on the GaAs/AlGaAs material system where the aluminium mole fraction is below 0.45 are used for detecting long wavelength infrared radiation. By increasing the aluminium fraction these detectors can be made to detect shorter wavelengths as well, however this increase degrades detector performance. In this work we have studied a quantum well infrared photodetector with superlattice barriers where the structure is sensitive at mid infrared band. This is a new method for enabling GaAs/AlGaAs based quantum well infrared phototetectors to detect at midinfared wavelengths without the need for higher aluminium mole fractions.",
keywords = "Infrared photodetectors, Intersubband transitions, Quantum well, Superlattice",
author = "N. Hatefi-Kargan and Linfield, {E. H.} and P. Harrison and Steenson, {D. P.}",
year = "2010",
month = jul,
day = "8",
doi = "10.1109/SOPO.2010.5504037",
language = "English",
isbn = "9781424449637",
series = "Symposium on Photonics and Optoelectronic, SOPO - Proceedings",
publisher = "IEEE",
booktitle = "2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings",
address = "United States",
note = "International Symposium on Photonics and Optoelectronics 2010, SOPO 2010 ; Conference date: 19-06-2010 Through 21-06-2010",
}