A Superlattice Barrier Based Quantum Well Infrared Photodetector With Maximum Sensitivity at MidInfrared Wavelengths

N. Hatefi-Kargan, E. H. Linfield, P. Harrison, D. P. Steenson

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Quantum well infrared photodetectors based on the GaAs/AlGaAs material system where the aluminium mole fraction is below 0.45 are used for detecting long wavelength infrared radiation. By increasing the aluminium fraction these detectors can be made to detect shorter wavelengths as well, however this increase degrades detector performance. In this work we have studied a quantum well infrared photodetector with superlattice barriers where the structure is sensitive at mid infrared band. This is a new method for enabling GaAs/AlGaAs based quantum well infrared phototetectors to detect at midinfared wavelengths without the need for higher aluminium mole fractions.

Original languageEnglish
Title of host publication2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
PublisherIEEE
Number of pages3
ISBN (Electronic)9781424449644
ISBN (Print)9781424449637
DOIs
Publication statusPublished - 8 Jul 2010
Externally publishedYes
EventInternational Symposium on Photonics and Optoelectronics 2010 - Chengdu, China
Duration: 19 Jun 201021 Jun 2010

Publication series

NameSymposium on Photonics and Optoelectronic, SOPO - Proceedings
PublisherIEEE
ISSN (Print)2156-8464
ISSN (Electronic)2156-8480

Conference

ConferenceInternational Symposium on Photonics and Optoelectronics 2010
Abbreviated titleSOPO 2010
Country/TerritoryChina
CityChengdu
Period19/06/1021/06/10

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