Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells

W. M. Zheng, M. P. Halsall, P. Harmer, P. Harrison, M. J. Steer

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


A series of Be δ-doped GaAs/AlAs multiple-quantum wells with the doping at the well center were grown by molecular beam epitaxy. The photoluminescence spectra were measured at 4, 20, 40, 80, 120, 200 K, respectively. The two-hole transitions of the acceptor-bound exciton from the ground state, 1S 3/26), to the first-excited state, 2S 3/26), have been clearly observed and the acceptor binding energy measured. A variational calculation is presented to obtain the acceptor binding energy as a function of well width. It is found that the experimental results are in good agreement with the theory.

Original languageEnglish
Pages (from-to)6039-6042
Number of pages4
JournalJournal of Applied Physics
Issue number10
Early online date31 Oct 2002
Publication statusPublished - 15 Nov 2002
Externally publishedYes


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