Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures

Z. Ikoníc; P. Harrison; R. W. Kelsall

doi:10.1016/S0921-5107(01)00762-0

Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures

Z. Ikoníc, P. Harrison, R. W. Kelsall

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The alloy disorder and phonon scattering intersubband relaxation rates of holes in SiGe quantum wells have been calculated using the 6 × 6 k·p method. The relative importance of different branches of non-polar optical and acoustic phonons is discussed, and compared with the alloy disorder contribution. Generally, for low-energy transitions at lower temperatures, the alloy scattering is found to be the dominant relaxation mechanism. The results are relevant for the design of SiGe based quantum cascade lasers operating via valence intersubband transitions.

Original language	English
Pages (from-to)	84-87
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	89
Issue number	1-3
Early online date	21 Jan 2002
DOIs	https://doi.org/10.1016/S0921-5107(01)00762-0
Publication status	Published - 14 Feb 2002
Externally published	Yes

Access to Document

10.1016/S0921-5107(01)00762-0Licence: Unspecified

Cite this

@article{7ce35f7f9ec74dd193a0fb1378ebe6c2,

title = "Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures",

abstract = "The alloy disorder and phonon scattering intersubband relaxation rates of holes in SiGe quantum wells have been calculated using the 6 × 6 k·p method. The relative importance of different branches of non-polar optical and acoustic phonons is discussed, and compared with the alloy disorder contribution. Generally, for low-energy transitions at lower temperatures, the alloy scattering is found to be the dominant relaxation mechanism. The results are relevant for the design of SiGe based quantum cascade lasers operating via valence intersubband transitions.",

keywords = "Alloy scattering, Holes, Phonon scattering, Quantum cascade laser",

author = "Z. Ikon{\'i}c and P. Harrison and Kelsall, {R. W.}",

note = "Funding Information: This work is supported by DARPA/USAF contract No. F19628-99-C-0074. The authors thank W. Batty (Leeds) and R.A. Soref (Hanscom AFB) for useful discussions. ",

year = "2002",

month = feb,

day = "14",

doi = "10.1016/S0921-5107(01)00762-0",

language = "English",

volume = "89",

pages = "84--87",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures

AU - Ikoníc, Z.

AU - Harrison, P.

AU - Kelsall, R. W.

N1 - Funding Information: This work is supported by DARPA/USAF contract No. F19628-99-C-0074. The authors thank W. Batty (Leeds) and R.A. Soref (Hanscom AFB) for useful discussions.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - The alloy disorder and phonon scattering intersubband relaxation rates of holes in SiGe quantum wells have been calculated using the 6 × 6 k·p method. The relative importance of different branches of non-polar optical and acoustic phonons is discussed, and compared with the alloy disorder contribution. Generally, for low-energy transitions at lower temperatures, the alloy scattering is found to be the dominant relaxation mechanism. The results are relevant for the design of SiGe based quantum cascade lasers operating via valence intersubband transitions.

AB - The alloy disorder and phonon scattering intersubband relaxation rates of holes in SiGe quantum wells have been calculated using the 6 × 6 k·p method. The relative importance of different branches of non-polar optical and acoustic phonons is discussed, and compared with the alloy disorder contribution. Generally, for low-energy transitions at lower temperatures, the alloy scattering is found to be the dominant relaxation mechanism. The results are relevant for the design of SiGe based quantum cascade lasers operating via valence intersubband transitions.

KW - Alloy scattering

KW - Holes

KW - Phonon scattering

KW - Quantum cascade laser

UR - http://www.scopus.com/inward/record.url?scp=0037074793&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(01)00762-0

DO - 10.1016/S0921-5107(01)00762-0

M3 - Article

AN - SCOPUS:0037074793

VL - 89

SP - 84

EP - 87

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -

Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this