Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures

Z. Ikoníc, P. Harrison, R. W. Kelsall

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The alloy disorder and phonon scattering intersubband relaxation rates of holes in SiGe quantum wells have been calculated using the 6 × 6 k·p method. The relative importance of different branches of non-polar optical and acoustic phonons is discussed, and compared with the alloy disorder contribution. Generally, for low-energy transitions at lower temperatures, the alloy scattering is found to be the dominant relaxation mechanism. The results are relevant for the design of SiGe based quantum cascade lasers operating via valence intersubband transitions.

Original languageEnglish
Pages (from-to)84-87
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Early online date21 Jan 2002
Publication statusPublished - 14 Feb 2002
Externally publishedYes


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