Abstract
In this paper we present a detailed study in which the formation, by heavy ion impact, and thermal recrystallisation of individual amorphous zones have been studied using in-situ transmission electron microscopy. In agreement with previous work, we observe a reduction in the total volume of amorphous material contained within the amorphous zones following thermal annealing over a wide range of temperatures. When the evolution of the individual amorphous zones is followed, those with similar starting sizes are observed to recrystallise over a range of temperatures from 70°C to 500°C. The temperature at which an amorphous zone fully recrystallises does not appear to be correlated with initial size. In addition, zones are occasionally observed to increase in size temporarily on some isochronal annealing steps. Furthermore, observations during a ramp anneal show that many zones recrystallise in a stepwise manner separated by periods of stability. These phenomenon are discussed in terms of the I-V pair.
Original language | English |
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Title of host publication | Gettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting |
Editors | Bernard Pichaud, Alain Claverie, Daniel Alquier, Hans Richter, Martin Kittler |
Publisher | Trans Tech Publications Ltd |
Pages | 145-150 |
Number of pages | 6 |
ISBN (Electronic) | 9783038130291 |
ISBN (Print) | 3908451132, 9783908451136 |
DOIs | |
Publication status | Published - 15 Dec 2005 |
Externally published | Yes |
Event | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy - Giens, France Duration: 25 Sep 2005 → 30 Sep 2005 Conference number: 11 |
Publication series
Name | Solid State Phenomena |
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Volume | 108-109 |
ISSN (Print) | 1012-0394 |
Conference
Conference | 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy |
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Abbreviated title | GADEST 2005 |
Country/Territory | France |
City | Giens |
Period | 25/09/05 → 30/09/05 |