Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon

P. D. Edmondson, S. E. Donnelly, R. C. Birtcher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper we present a detailed study in which the formation, by heavy ion impact, and thermal recrystallisation of individual amorphous zones have been studied using in-situ transmission electron microscopy. In agreement with previous work, we observe a reduction in the total volume of amorphous material contained within the amorphous zones following thermal annealing over a wide range of temperatures. When the evolution of the individual amorphous zones is followed, those with similar starting sizes are observed to recrystallise over a range of temperatures from 70°C to 500°C. The temperature at which an amorphous zone fully recrystallises does not appear to be correlated with initial size. In addition, zones are occasionally observed to increase in size temporarily on some isochronal annealing steps. Furthermore, observations during a ramp anneal show that many zones recrystallise in a stepwise manner separated by periods of stability. These phenomenon are discussed in terms of the I-V pair.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
EditorsBernard Pichaud, Alain Claverie, Daniel Alquier, Hans Richter, Martin Kittler
PublisherTrans Tech Publications Ltd
Pages145-150
Number of pages6
ISBN (Electronic)9783038130291
ISBN (Print)3908451132, 9783908451136
DOIs
Publication statusPublished - 15 Dec 2005
Externally publishedYes
Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy - Giens, France
Duration: 25 Sep 200530 Sep 2005
Conference number: 11

Publication series

NameSolid State Phenomena
Volume108-109
ISSN (Print)1012-0394

Conference

Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy
Abbreviated titleGADEST 2005
Country/TerritoryFrance
CityGiens
Period25/09/0530/09/05

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