An atomistic investigation of FIB process damage on diamond

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Focused Ion Beam (FIB) is one of the important machining techniques to fabricate diamond sensors/detectors used for drug analysis, chemical analysis and bio-sensing applications. In-depth understanding of the high energy collision process and the residual damage induced along the trace of gallium ion could undoubtedly facilitate the development and improvement of performance of such devices through the optimization of machining processes. Based on the merit offered by large-scale molecular dynamics (MD) simulation method and the new progress made in high performance computing technique (HPC), a new atomistic modelling system was proposed in this paper to investigate the high energy collision process involved two gallium ions. The simulation results indicated that the energetic ion collision process comprises a bombardment event with a pulse temperature and a lateral relative long period annealing recrystallization process. The peak temperature for the second ion collision was 129.2 K higher than the first one, which indicates the alternation of the thermal conductivity of diamond due to the formation of amorphous (sp2 graphite-like) structure during the first ion collision and annealing process. Besides giving the damage configuration and distribution in diamond after fully recrystallization, the simulation also used coordination number (CN) and radius distribution function (RDF) to revel the change of diamond lattice structure after the collision process, which provided an insight of damage induced by FIB process.

Original languageEnglish
Title of host publicationProceedings of the 13th International Conference of the European Society for Precision Engineering and Nanotechnology
Subtitle of host publicationEUSPEN 2013
Publishereuspen
Pages265-268
Number of pages4
Volume2
ISBN (Electronic)9780956679024
Publication statusPublished - 2013
Event13th International Conference of the European Society for Precision Engineering and Nanotechnology - Maritim Hotel, Berlin, Germany
Duration: 27 May 201331 May 2013
Conference number: 13
http://optik-bb.de/en/content/euspen-13th-international-conference-european-society-fpr-precision-engineering (Link to Conference Details)

Conference

Conference13th International Conference of the European Society for Precision Engineering and Nanotechnology
Abbreviated titleEUSPEN 2013
CountryGermany
CityBerlin
Period27/05/1331/05/13
OtherThe 13th Conference and exhibition of the European Society for Precision Engineering and Technology (euspen) will provide a leading forum for industrialists and academics alike to review the best of worldwide industrial innovation, progressive research and technology developments. It offers information on the latest precision and ultra-precision developments, reports and discussion on progress, and room for starting and continuing international cooperation between researchers and industrialists. Delegates will gain an insight of the precision engineering and nanotechnology priorities of Europe's Leading Industrial Nation, Germany. With the country's high importance of energy generation and efficiency in mind the special session topic of the 13th euspen conference and exhibition will focus on precision engineering for the advancement of energy generation, renewable energy and energy efficient systems.
Internet address

Fingerprint

Diamond
Focused ion beams
Diamonds
diamonds
ion beams
Ions
damage
collisions
Gallium
ions
Machining
machining
gallium
Annealing
Graphite
annealing
simulation
alternations
Distribution functions
Molecular dynamics

Cite this

Tong, Z., Luo, X., Blunt, L., & Jiang, X. (2013). An atomistic investigation of FIB process damage on diamond. In Proceedings of the 13th International Conference of the European Society for Precision Engineering and Nanotechnology: EUSPEN 2013 (Vol. 2, pp. 265-268). euspen.
Tong, Zhen ; Luo, Xichun ; Blunt, Liam ; Jiang, Xiangqian. / An atomistic investigation of FIB process damage on diamond. Proceedings of the 13th International Conference of the European Society for Precision Engineering and Nanotechnology: EUSPEN 2013. Vol. 2 euspen, 2013. pp. 265-268
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Tong, Z, Luo, X, Blunt, L & Jiang, X 2013, An atomistic investigation of FIB process damage on diamond. in Proceedings of the 13th International Conference of the European Society for Precision Engineering and Nanotechnology: EUSPEN 2013. vol. 2, euspen, pp. 265-268, 13th International Conference of the European Society for Precision Engineering and Nanotechnology, Berlin, Germany, 27/05/13.

An atomistic investigation of FIB process damage on diamond. / Tong, Zhen; Luo, Xichun; Blunt, Liam; Jiang, Xiangqian.

Proceedings of the 13th International Conference of the European Society for Precision Engineering and Nanotechnology: EUSPEN 2013. Vol. 2 euspen, 2013. p. 265-268.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Focused Ion Beam (FIB) is one of the important machining techniques to fabricate diamond sensors/detectors used for drug analysis, chemical analysis and bio-sensing applications. In-depth understanding of the high energy collision process and the residual damage induced along the trace of gallium ion could undoubtedly facilitate the development and improvement of performance of such devices through the optimization of machining processes. Based on the merit offered by large-scale molecular dynamics (MD) simulation method and the new progress made in high performance computing technique (HPC), a new atomistic modelling system was proposed in this paper to investigate the high energy collision process involved two gallium ions. The simulation results indicated that the energetic ion collision process comprises a bombardment event with a pulse temperature and a lateral relative long period annealing recrystallization process. The peak temperature for the second ion collision was 129.2 K higher than the first one, which indicates the alternation of the thermal conductivity of diamond due to the formation of amorphous (sp2 graphite-like) structure during the first ion collision and annealing process. Besides giving the damage configuration and distribution in diamond after fully recrystallization, the simulation also used coordination number (CN) and radius distribution function (RDF) to revel the change of diamond lattice structure after the collision process, which provided an insight of damage induced by FIB process.

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Tong Z, Luo X, Blunt L, Jiang X. An atomistic investigation of FIB process damage on diamond. In Proceedings of the 13th International Conference of the European Society for Precision Engineering and Nanotechnology: EUSPEN 2013. Vol. 2. euspen. 2013. p. 265-268