This paper presents work using the capabilities of two TEM with in-situ ion irradiation facilities: Microscope and Ion Accelerator for Materials Investigation (MIAMI) at the University of Huddersfield and Joint Accelerators for Nano-science and Nuclear Simulation JANNuS at Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Orsay, France, to study the nucleation and growth of He bubbles in silicon carbide (SiC) and to carry out an investigation into bubble behaviour at high temperatures and under displacing irradiation. Preliminary results on bubble nucleation and growth during He irradiation of SiC are presented together with results from a simultaneous anneal and high-energy heavy-ion irradiation of samples containing He bubbles. The displacing irradiation is observed to impede He bubble growth resulting in smaller bubbles than those obtained from an anneal alone. A tentative interpretation of these observations is presented.
|Journal of Physics: Conference Series
|Published - 2012
|Electron Microscopy and Analysis Group Conference 2011 - Birmingham, United Kingdom
Duration: 6 Sep 2011 → 9 Sep 2011