An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2

S. E. Donnelly, J. A. Hinks, C. J. Pawley, K. J. Abrams, J. A. Van Den Berg

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Using the new MIAMI facility (Microscope and Ion Accelerators for Materials Investigations) at the University of Huddersfield, an in-situ TEM study has been carried out on the effects of helium implantation on a tri-layer system consisting of monocrystalline silicon (c-Si), silicon dioxide (SiO2) and polycrystalline silicon (poly-Si). Co-irradiation of these three components enabled direct comparisons to be made of differences between the response of c-Si and poly-Si to the He irradiation; in particular, differences in the development of interstitial clusters and bubbles and eventual amorphisation. For implantations to high fluences (>1017 ions/cm2), very significant levels of porosity were observed to build up in the Si, leading to changes in the width of the Si layers of up to 29% Although no helium bubbles were formed in the SiO2 layer, a very significant dimensional change (but in this case an observed shrinkage) also occurred in this material. Finally, room temperature amorphisation of the Si was observed at high fluences, beginning at somewhat lower fluences in the poly-Si than in the c-Si. A brief discussion of the origins of these effects is presented.

LanguageEnglish
Article number012045
JournalJournal of Physics: Conference Series
Volume371
Early online date2 Jul 2012
DOIs
Publication statusPublished - Sep 2012
EventElectron Microscopy and Analysis Group Conference - Birmingham, United Kingdom
Duration: 6 Sep 20119 Sep 2011

Fingerprint

ion irradiation
transmission electron microscopy
silicon
fluence
implantation
bubbles
helium
ion accelerators
irradiation
shrinkage
interstitials
accelerators
microscopes
silicon dioxide
porosity
room temperature
ions

Cite this

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title = "An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2",
abstract = "Using the new MIAMI facility (Microscope and Ion Accelerators for Materials Investigations) at the University of Huddersfield, an in-situ TEM study has been carried out on the effects of helium implantation on a tri-layer system consisting of monocrystalline silicon (c-Si), silicon dioxide (SiO2) and polycrystalline silicon (poly-Si). Co-irradiation of these three components enabled direct comparisons to be made of differences between the response of c-Si and poly-Si to the He irradiation; in particular, differences in the development of interstitial clusters and bubbles and eventual amorphisation. For implantations to high fluences (>1017 ions/cm2), very significant levels of porosity were observed to build up in the Si, leading to changes in the width of the Si layers of up to 29{\%} Although no helium bubbles were formed in the SiO2 layer, a very significant dimensional change (but in this case an observed shrinkage) also occurred in this material. Finally, room temperature amorphisation of the Si was observed at high fluences, beginning at somewhat lower fluences in the poly-Si than in the c-Si. A brief discussion of the origins of these effects is presented.",
author = "Donnelly, {S. E.} and Hinks, {J. A.} and Pawley, {C. J.} and Abrams, {K. J.} and {Van Den Berg}, {J. A.}",
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An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2. / Donnelly, S. E.; Hinks, J. A.; Pawley, C. J.; Abrams, K. J.; Van Den Berg, J. A.

In: Journal of Physics: Conference Series, Vol. 371, 012045, 09.2012.

Research output: Contribution to journalConference article

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AU - Donnelly, S. E.

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AU - Van Den Berg, J. A.

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AB - Using the new MIAMI facility (Microscope and Ion Accelerators for Materials Investigations) at the University of Huddersfield, an in-situ TEM study has been carried out on the effects of helium implantation on a tri-layer system consisting of monocrystalline silicon (c-Si), silicon dioxide (SiO2) and polycrystalline silicon (poly-Si). Co-irradiation of these three components enabled direct comparisons to be made of differences between the response of c-Si and poly-Si to the He irradiation; in particular, differences in the development of interstitial clusters and bubbles and eventual amorphisation. For implantations to high fluences (>1017 ions/cm2), very significant levels of porosity were observed to build up in the Si, leading to changes in the width of the Si layers of up to 29% Although no helium bubbles were formed in the SiO2 layer, a very significant dimensional change (but in this case an observed shrinkage) also occurred in this material. Finally, room temperature amorphisation of the Si was observed at high fluences, beginning at somewhat lower fluences in the poly-Si than in the c-Si. A brief discussion of the origins of these effects is presented.

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