An in situ transmission electron microscope study of the anomalous annealing of spatially isolated disordered zones in silicon

P. D. Edmondson, R. C. Birtcher, V. M. Vishnyakov, P. Lopez, L. Pelaz, L. A. Marques, S. E. Donnelly

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Spatially isolated disordered zones have been produced in silicon by irradiating with Xe+ ions in situ in a transmission electron microscope to fluences in the range of 1011 to 1012 ions cm-2. At these levels of fluence, the zones are clearly visible with minimal overlap with typical effective radii of the order of 1 nm. Studies of the isochronal recrystallization of zones with similar starting radii have shown that although most zones behave as expected and immediately begin to reduce their effective radius, in a small number of cases, some of the zones increase in size following an isochronal recrystallization step. Kinetic Monte-Carlo simulations have indicated that this behaviour may result when a high density of point defects surrounds an amorphous core. Upon recrystallization, the system relaxes to a configuration which can give rise to an increase in volume of the disordered zone of up to 50%. The kinetic Monte-Carlo simulations have shown that the defect most likely to be responsible for this anomalous growth is the interstitial-vacancy (IV) pair and the configuration of the IV pairs around an amorphous zone has a strong influence on the maximum re-growth of the zone.

Original languageEnglish
Pages (from-to)284-287
Number of pages4
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 1 Jan 2006
Externally publishedYes


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