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Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.
|Number of pages||4|
|Early online date||21 Nov 2015|
|Publication status||Published - 1 Mar 2016|
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- 1 Finished
A Study of the Combined Effects of Displacement Damage and Helium Accumulation in Model Nuclear Materials
1/02/15 → 31/08/18