An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Philip D. Edmondson; K. J. Abrams; J. A. Hinks; G. Greaves; C. J. Pawley; I. Hanif; S. E. Donnelly

doi:10.1016/j.scriptamat.2015.11.010

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Philip D. Edmondson, K. J. Abrams, J. A. Hinks, G. Greaves, C. J. Pawley, I. Hanif, S. E. Donnelly

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

Original language	English
Pages (from-to)	190-193
Number of pages	4
Journal	Scripta Materialia
Volume	113
Early online date	21 Nov 2015
DOIs	https://doi.org/10.1016/j.scriptamat.2015.11.010
Publication status	Published - 1 Mar 2016

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10.1016/j.scriptamat.2015.11.010Licence: Other

http://eprints.hud.ac.uk/id/eprint/26579/Licence: Unspecified

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@article{bedceb6c44a242abbfc08742cc43d065,

title = "An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe",

abstract = "Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.",

keywords = "Amorphisation, In situ TEM, Ion irradiation, Silicon",

author = "Edmondson, {Philip D.} and Abrams, {K. J.} and Hinks, {J. A.} and G. Greaves and Pawley, {C. J.} and I. Hanif and Donnelly, {S. E.}",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.scriptamat.2015.11.010",

language = "English",

volume = "113",

pages = "190--193",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

AU - Edmondson, Philip D.

AU - Abrams, K. J.

AU - Hinks, J. A.

AU - Greaves, G.

AU - Pawley, C. J.

AU - Hanif, I.

AU - Donnelly, S. E.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

AB - Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

KW - Amorphisation

KW - In situ TEM

KW - Ion irradiation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84952362319&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2015.11.010

DO - 10.1016/j.scriptamat.2015.11.010

M3 - Article

AN - SCOPUS:84952362319

VL - 113

SP - 190

EP - 193

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

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A Study of the Combined Effects of Displacement Damage and Helium Accumulation in Model Nuclear Materials

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An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Abstract

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A Study of the Combined Effects of Displacement Damage and Helium Accumulation in Model Nuclear Materials

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