An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Philip D. Edmondson, K. J. Abrams, J. A. Hinks, G. Greaves, C. J. Pawley, I. Hanif, S. E. Donnelly

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

Original languageEnglish
Pages (from-to)190-193
Number of pages4
JournalScripta Materialia
Volume113
Early online date21 Nov 2015
DOIs
Publication statusPublished - 1 Mar 2016

Fingerprint

Amorphization
Silicon
Ion bombardment
ion irradiation
Transmission electron microscopy
transmission electron microscopy
silicon
heavy ions
cascades
electron diffraction
recovery
ion beams
Heavy ions
Electron diffraction
Ion beams
irradiation
room temperature
curves
electronics
Irradiation

Cite this

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title = "An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe",
abstract = "Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.",
keywords = "Amorphisation, In situ TEM, Ion irradiation, Silicon",
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An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe. / Edmondson, Philip D.; Abrams, K. J.; Hinks, J. A.; Greaves, G.; Pawley, C. J.; Hanif, I.; Donnelly, S. E.

In: Scripta Materialia, Vol. 113, 01.03.2016, p. 190-193.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

AU - Edmondson, Philip D.

AU - Abrams, K. J.

AU - Hinks, J. A.

AU - Greaves, G.

AU - Pawley, C. J.

AU - Hanif, I.

AU - Donnelly, S. E.

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AB - Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

KW - Amorphisation

KW - In situ TEM

KW - Ion irradiation

KW - Silicon

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