Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering

Andrew Rossall, Jakob Van Den Berg, David Meehan, Sudha Rajendiran, Erik Wagenaars

Research output: Contribution to journalArticle

Abstract

In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.
LanguageEnglish
Pages274-278
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume450
Early online date7 Jul 2018
DOIs
Publication statusPublished - 1 Jul 2019

Fingerprint

ion scattering
Pulsed laser deposition
Oxide films
pulsed laser deposition
Transition metals
metal oxides
transition metals
Scattering
Plasmas
Thin films
Ions
thin films
Depth profiling
energy
oxygen plasma
Inductively coupled plasma
Laser ablation
Deposition rates
Stoichiometry
Ion beams

Cite this

@article{1474b60ed96d448790811dc68ca77069,
title = "Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering",
abstract = "In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.",
keywords = "Medium energy ion scattering, Nano-layer profiling, Plasma-enhanced pulsed laser deposition, Thin film, Transition metal oxide, Inductively coupled plasma",
author = "Andrew Rossall and {Van Den Berg}, Jakob and David Meehan and Sudha Rajendiran and Erik Wagenaars",
year = "2019",
month = "7",
day = "1",
doi = "10.1016/j.nimb.2018.06.023",
language = "English",
volume = "450",
pages = "274--278",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Analysis of plasma enhanced pulsed laser deposition of transition metal oxide thin films using medium energy ion scattering

AU - Rossall, Andrew

AU - Van Den Berg, Jakob

AU - Meehan, David

AU - Rajendiran, Sudha

AU - Wagenaars, Erik

PY - 2019/7/1

Y1 - 2019/7/1

N2 - In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.

AB - In this study, plasma-enhanced pulsed laser deposition (PE-PLD), which is a novel variant of pulsed laser deposition that combines laser ablation of metal targets with an electrically-produced oxygen plasma background, has been used for the fabrication of ZnO and Cu2O thin films. Samples prepared using the PE-PLD process, with the aim of generating desirable properties for a range of electrical and optical applications, have been analysed using medium energy ion scattering. Using a 100 keV He+ ion beam, high resolution depth profiling of the films was performed with an analysis of the stoichiometry and interface abruptness of these novel materials. It was found that the PE-PLD process can create stoichiometric thin films, the uniformity of which can be controlled by varying the power of the inductively coupled plasma. This technique showed a high deposition rate of ∼0.1 nm s−1.

KW - Medium energy ion scattering

KW - Nano-layer profiling

KW - Plasma-enhanced pulsed laser deposition

KW - Thin film

KW - Transition metal oxide

KW - Inductively coupled plasma

UR - http://www.scopus.com/inward/record.url?scp=85049555353&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2018.06.023

DO - 10.1016/j.nimb.2018.06.023

M3 - Article

VL - 450

SP - 274

EP - 278

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -