Annealing of isolated amorphous zones in silicon

S. E. Donnelly, R. C. Birtcher, V. M. Vishnyakov, G. Carter

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.

LanguageEnglish
Pages1860-1862
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number12
Early online date18 Mar 2003
DOIs
Publication statusPublished - 24 Mar 2003
Externally publishedYes

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Donnelly, S. E. ; Birtcher, R. C. ; Vishnyakov, V. M. ; Carter, G. / Annealing of isolated amorphous zones in silicon. In: Applied Physics Letters. 2003 ; Vol. 82, No. 12. pp. 1860-1862.
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Annealing of isolated amorphous zones in silicon. / Donnelly, S. E.; Birtcher, R. C.; Vishnyakov, V. M.; Carter, G.

In: Applied Physics Letters, Vol. 82, No. 12, 24.03.2003, p. 1860-1862.

Research output: Contribution to journalArticle

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