Annealing of isolated amorphous zones in silicon

S. E. Donnelly, R. C. Birtcher, V. M. Vishnyakov, G. Carter

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability.

Original languageEnglish
Pages (from-to)1860-1862
Number of pages3
JournalApplied Physics Letters
Issue number12
Early online date18 Mar 2003
Publication statusPublished - 24 Mar 2003
Externally publishedYes


Dive into the research topics of 'Annealing of isolated amorphous zones in silicon'. Together they form a unique fingerprint.

Cite this