Anomalous annealing behavior of isolated amorphous zones in silicon

S. E. Donnelly, R. C. Birtcher, V. M. Vishnyakov, P. D. Edmondson, G. Carter

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The formation and annealing of individual amorphous zones in silicon have been studied using in situ transmission electron microscopy. This technique enables us to identify anomalous behavior that cannot be deduced from statistical studies. Zones were formed at room temperature by impacts of single 200 keV Xe+ ions and imaged using structure factor contrast under down-zone conditions. Irradiation to fluences in the range 10 11-1012 ions/cm2, results in small zones of black contrast (typically of order 1 nm in radius) which are clearly visible with minimal overlap. In agreement with earlier work, we observe a reduction in the total volume of amorphous material upon annealing over a temperature range from room temperature to 500 °C. Disappearance of individual zones with the same starting radius is observed to occur over a wide range of temperatures and in a small number of cases, zones are observed to increase in size during annealing. A discussion of these effects, based on the bond defect or I-V pair is presented.

LanguageEnglish
Pages595-597
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume242
Issue number1-2
Early online date27 Sep 2005
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

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Annealing
Silicon
annealing
silicon
radii
amorphous materials
room temperature
Temperature
Ions
fluence
ions
transmission electron microscopy
irradiation
temperature
defects
Irradiation
Transmission electron microscopy
Defects

Cite this

@article{8c508eb6a2df498e894c2cda879def48,
title = "Anomalous annealing behavior of isolated amorphous zones in silicon",
abstract = "The formation and annealing of individual amorphous zones in silicon have been studied using in situ transmission electron microscopy. This technique enables us to identify anomalous behavior that cannot be deduced from statistical studies. Zones were formed at room temperature by impacts of single 200 keV Xe+ ions and imaged using structure factor contrast under down-zone conditions. Irradiation to fluences in the range 10 11-1012 ions/cm2, results in small zones of black contrast (typically of order 1 nm in radius) which are clearly visible with minimal overlap. In agreement with earlier work, we observe a reduction in the total volume of amorphous material upon annealing over a temperature range from room temperature to 500 °C. Disappearance of individual zones with the same starting radius is observed to occur over a wide range of temperatures and in a small number of cases, zones are observed to increase in size during annealing. A discussion of these effects, based on the bond defect or I-V pair is presented.",
keywords = "Amorphisation, Ion irradiation, Recrystallisation, Silicon, TEM",
author = "Donnelly, {S. E.} and Birtcher, {R. C.} and Vishnyakov, {V. M.} and Edmondson, {P. D.} and G. Carter",
year = "2006",
month = "1",
doi = "10.1016/j.nimb.2005.08.083",
language = "English",
volume = "242",
pages = "595--597",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

Anomalous annealing behavior of isolated amorphous zones in silicon. / Donnelly, S. E.; Birtcher, R. C.; Vishnyakov, V. M.; Edmondson, P. D.; Carter, G.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.2006, p. 595-597.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Anomalous annealing behavior of isolated amorphous zones in silicon

AU - Donnelly, S. E.

AU - Birtcher, R. C.

AU - Vishnyakov, V. M.

AU - Edmondson, P. D.

AU - Carter, G.

PY - 2006/1

Y1 - 2006/1

N2 - The formation and annealing of individual amorphous zones in silicon have been studied using in situ transmission electron microscopy. This technique enables us to identify anomalous behavior that cannot be deduced from statistical studies. Zones were formed at room temperature by impacts of single 200 keV Xe+ ions and imaged using structure factor contrast under down-zone conditions. Irradiation to fluences in the range 10 11-1012 ions/cm2, results in small zones of black contrast (typically of order 1 nm in radius) which are clearly visible with minimal overlap. In agreement with earlier work, we observe a reduction in the total volume of amorphous material upon annealing over a temperature range from room temperature to 500 °C. Disappearance of individual zones with the same starting radius is observed to occur over a wide range of temperatures and in a small number of cases, zones are observed to increase in size during annealing. A discussion of these effects, based on the bond defect or I-V pair is presented.

AB - The formation and annealing of individual amorphous zones in silicon have been studied using in situ transmission electron microscopy. This technique enables us to identify anomalous behavior that cannot be deduced from statistical studies. Zones were formed at room temperature by impacts of single 200 keV Xe+ ions and imaged using structure factor contrast under down-zone conditions. Irradiation to fluences in the range 10 11-1012 ions/cm2, results in small zones of black contrast (typically of order 1 nm in radius) which are clearly visible with minimal overlap. In agreement with earlier work, we observe a reduction in the total volume of amorphous material upon annealing over a temperature range from room temperature to 500 °C. Disappearance of individual zones with the same starting radius is observed to occur over a wide range of temperatures and in a small number of cases, zones are observed to increase in size during annealing. A discussion of these effects, based on the bond defect or I-V pair is presented.

KW - Amorphisation

KW - Ion irradiation

KW - Recrystallisation

KW - Silicon

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=28544448020&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.08.083

DO - 10.1016/j.nimb.2005.08.083

M3 - Article

VL - 242

SP - 595

EP - 597

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -