Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In the plasma doping (PLAD) process studied, Si(100) wafers were exposed to an As containing plasma and pulse biased to between 4 and 10 kV to ion fluences of 1x1016 cm-2. Medium energy ion scattering (MEIS) analysis was applied after i) the PLAD implant, ii) two types of wet chemical clean and iii) spike annealing to 1000°C, to determine quantitative depth profiles of As, Si and O and retained As dose at each stage.Following PLAD at a 7 kV bias, MEIS showed the formation of an intermixed Si/As layer which decayed almost linearly from a ~40% As fraction directly under a 1.2 nm thick surface oxide to near-zero over a depth of ~17 nm. A non-oxidizing wet clean is shown to etch away 7 nm of the mixed layer, stopping at a Si concentration of 4x1022 cm3 and remove around 80% of the implanted As. Concentration depth profiles of As visible to the beam in both random and aligned lattice directions, yielded the substitutional As profile and retained As dose of 8x1014 cm-2. This dose is shown to be strongly bias voltage (implant energy) dependent, giving a ~10-fold increase going from 4 to 10 kV.The application of an industry standard SPM wet clean on the other hand, produced a 13.5 nm thick surface oxide overlaying the retained As implant and, after annealing a substitutional As depth profile with a concentration of 1x1021 cm-3 over a depth greater than 10 nm. This gives a substitutional As dose of 1.35x1015 cm-2 which represents a 70 % increase on that measured after a non-oxydizing chemical wet clean.

LanguageEnglish
Title of host publication2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
EditorsHeiner Ryssel, Volker Haublein
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages263-266
Number of pages4
Volume2018-September
ISBN (Electronic)9781538668290
ISBN (Print)9781538668283
DOIs
Publication statusPublished - 22 Aug 2019
Event22nd International Conference on Ion Implantation Technology - Congress Centrum, Wurzburg, Germany
Duration: 16 Sep 201821 Sep 2018
https://www.iit2018.org/ (Conference Homepage)
https://www.iit2018.org/content/dam/iisb/iit2018/documents/abstbook_iit2018.pdf (Abstract Book)

Conference

Conference22nd International Conference on Ion Implantation Technology
Abbreviated titleIIT 2018
CountryGermany
CityWurzburg
Period16/09/1821/09/18
Internet address

Fingerprint

Arsenic
ion scattering
arsenic
Doping (additives)
Scattering
Ions
Plasmas
high resolution
profiles
dosage
Oxides
Annealing
energy
Bias voltage
annealing
oxides
stopping
spikes
fluence
industries

Cite this

Van Den Berg, J. A., Rossall, A. K., & England, J. (2019). Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis. In H. Ryssel, & V. Haublein (Eds.), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings (Vol. 2018-September, pp. 263-266). [8807964] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2018.8807964
Van Den Berg, J. A. ; Rossall, A. K. ; England, Jonathan. / Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis. 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. editor / Heiner Ryssel ; Volker Haublein. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2019. pp. 263-266
@inproceedings{59c843ff67074fe09de4ce127c87c755,
title = "Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis",
abstract = "In the plasma doping (PLAD) process studied, Si(100) wafers were exposed to an As containing plasma and pulse biased to between 4 and 10 kV to ion fluences of 1x1016 cm-2. Medium energy ion scattering (MEIS) analysis was applied after i) the PLAD implant, ii) two types of wet chemical clean and iii) spike annealing to 1000°C, to determine quantitative depth profiles of As, Si and O and retained As dose at each stage.Following PLAD at a 7 kV bias, MEIS showed the formation of an intermixed Si/As layer which decayed almost linearly from a ~40{\%} As fraction directly under a 1.2 nm thick surface oxide to near-zero over a depth of ~17 nm. A non-oxidizing wet clean is shown to etch away 7 nm of the mixed layer, stopping at a Si concentration of 4x1022 cm3 and remove around 80{\%} of the implanted As. Concentration depth profiles of As visible to the beam in both random and aligned lattice directions, yielded the substitutional As profile and retained As dose of 8x1014 cm-2. This dose is shown to be strongly bias voltage (implant energy) dependent, giving a ~10-fold increase going from 4 to 10 kV.The application of an industry standard SPM wet clean on the other hand, produced a 13.5 nm thick surface oxide overlaying the retained As implant and, after annealing a substitutional As depth profile with a concentration of 1x1021 cm-3 over a depth greater than 10 nm. This gives a substitutional As dose of 1.35x1015 cm-2 which represents a 70 {\%} increase on that measured after a non-oxydizing chemical wet clean.",
keywords = "As plasma doping and processing, depth profiles and substitutional As dose, medium energy ion scattering analysis",
author = "{Van Den Berg}, {J. A.} and Rossall, {A. K.} and Jonathan England",
year = "2019",
month = "8",
day = "22",
doi = "10.1109/IIT.2018.8807964",
language = "English",
isbn = "9781538668283",
volume = "2018-September",
pages = "263--266",
editor = "Heiner Ryssel and Volker Haublein",
booktitle = "2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Van Den Berg, JA, Rossall, AK & England, J 2019, Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis. in H Ryssel & V Haublein (eds), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. vol. 2018-September, 8807964, Institute of Electrical and Electronics Engineers Inc., pp. 263-266, 22nd International Conference on Ion Implantation Technology, Wurzburg, Germany, 16/09/18. https://doi.org/10.1109/IIT.2018.8807964

Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis. / Van Den Berg, J. A.; Rossall, A. K.; England, Jonathan.

2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. ed. / Heiner Ryssel; Volker Haublein. Vol. 2018-September Institute of Electrical and Electronics Engineers Inc., 2019. p. 263-266 8807964.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis

AU - Van Den Berg, J. A.

AU - Rossall, A. K.

AU - England, Jonathan

PY - 2019/8/22

Y1 - 2019/8/22

N2 - In the plasma doping (PLAD) process studied, Si(100) wafers were exposed to an As containing plasma and pulse biased to between 4 and 10 kV to ion fluences of 1x1016 cm-2. Medium energy ion scattering (MEIS) analysis was applied after i) the PLAD implant, ii) two types of wet chemical clean and iii) spike annealing to 1000°C, to determine quantitative depth profiles of As, Si and O and retained As dose at each stage.Following PLAD at a 7 kV bias, MEIS showed the formation of an intermixed Si/As layer which decayed almost linearly from a ~40% As fraction directly under a 1.2 nm thick surface oxide to near-zero over a depth of ~17 nm. A non-oxidizing wet clean is shown to etch away 7 nm of the mixed layer, stopping at a Si concentration of 4x1022 cm3 and remove around 80% of the implanted As. Concentration depth profiles of As visible to the beam in both random and aligned lattice directions, yielded the substitutional As profile and retained As dose of 8x1014 cm-2. This dose is shown to be strongly bias voltage (implant energy) dependent, giving a ~10-fold increase going from 4 to 10 kV.The application of an industry standard SPM wet clean on the other hand, produced a 13.5 nm thick surface oxide overlaying the retained As implant and, after annealing a substitutional As depth profile with a concentration of 1x1021 cm-3 over a depth greater than 10 nm. This gives a substitutional As dose of 1.35x1015 cm-2 which represents a 70 % increase on that measured after a non-oxydizing chemical wet clean.

AB - In the plasma doping (PLAD) process studied, Si(100) wafers were exposed to an As containing plasma and pulse biased to between 4 and 10 kV to ion fluences of 1x1016 cm-2. Medium energy ion scattering (MEIS) analysis was applied after i) the PLAD implant, ii) two types of wet chemical clean and iii) spike annealing to 1000°C, to determine quantitative depth profiles of As, Si and O and retained As dose at each stage.Following PLAD at a 7 kV bias, MEIS showed the formation of an intermixed Si/As layer which decayed almost linearly from a ~40% As fraction directly under a 1.2 nm thick surface oxide to near-zero over a depth of ~17 nm. A non-oxidizing wet clean is shown to etch away 7 nm of the mixed layer, stopping at a Si concentration of 4x1022 cm3 and remove around 80% of the implanted As. Concentration depth profiles of As visible to the beam in both random and aligned lattice directions, yielded the substitutional As profile and retained As dose of 8x1014 cm-2. This dose is shown to be strongly bias voltage (implant energy) dependent, giving a ~10-fold increase going from 4 to 10 kV.The application of an industry standard SPM wet clean on the other hand, produced a 13.5 nm thick surface oxide overlaying the retained As implant and, after annealing a substitutional As depth profile with a concentration of 1x1021 cm-3 over a depth greater than 10 nm. This gives a substitutional As dose of 1.35x1015 cm-2 which represents a 70 % increase on that measured after a non-oxydizing chemical wet clean.

KW - As plasma doping and processing

KW - depth profiles and substitutional As dose

KW - medium energy ion scattering analysis

UR - http://www.scopus.com/inward/record.url?scp=85064885795&partnerID=8YFLogxK

U2 - 10.1109/IIT.2018.8807964

DO - 10.1109/IIT.2018.8807964

M3 - Conference contribution

SN - 9781538668283

VL - 2018-September

SP - 263

EP - 266

BT - 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings

A2 - Ryssel, Heiner

A2 - Haublein, Volker

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Van Den Berg JA, Rossall AK, England J. Arsenic Plasma Doping in Si Characterized by High Resolution Medium Energy Ion Scattering Depth Profile Analysis. In Ryssel H, Haublein V, editors, 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. Vol. 2018-September. Institute of Electrical and Electronics Engineers Inc. 2019. p. 263-266. 8807964 https://doi.org/10.1109/IIT.2018.8807964