Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

E. Demenev; D. Giubertoni; S. Gennaro; M. Bersani; E. Hourdakis; A. G. Nassiopoulou; M. A. Reading; J. A. Van Den Berg

doi:10.1063/1.4766541

Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

E. Demenev, D. Giubertoni, S. Gennaro, M. Bersani, E. Hourdakis, A. G. Nassiopoulou, M. A. Reading, J. A. Van Den Berg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si⁺ at energy 5 keV and a dose 1×10¹⁵ at/cm². As ion were implanted at 2 keV using 3 different doses: 1×10¹⁴, 5×10¹⁴ and 1×10¹⁵ at/cm². The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

Original language	English
Title of host publication	Ion Implantation Technology 2012
Subtitle of host publication	Proceedings of the 19th International Conference on Ion Implantation Technology
Editors	Lourdes Pelaz, Iván Santos, Ray Duffy, Frank Torregrosa, Konstantin Bourdelle
Publisher	American Institute of Physics Publising LLC
Pages	272-275
Number of pages	4
Volume	1496
ISBN (Print)	9780735411081
DOIs	https://doi.org/10.1063/1.4766541
Publication status	Published - 6 Nov 2012
Externally published	Yes
Event	19th IEEE International Conference on Ion Implantation Technology - Valladolid, Spain Duration: 25 Jun 2012 → 29 Jun 2012 Conference number: 19

Publication series

Name	AIP Conference Proceedings
Volume	1496
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	19th IEEE International Conference on Ion Implantation Technology
Abbreviated title	IIT 2012
Country/Territory	Spain
City	Valladolid
Period	25/06/12 → 29/06/12

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Cite this

Demenev, E., Giubertoni, D., Gennaro, S., Bersani, M., Hourdakis, E., Nassiopoulou, A. G., Reading, M. A., & Van Den Berg, J. A. (2012). Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. In L. Pelaz, I. Santos, R. Duffy, F. Torregrosa, & K. Bourdelle (Eds.), Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology (Vol. 1496, pp. 272-275). (AIP Conference Proceedings; Vol. 1496). American Institute of Physics Publising LLC. https://doi.org/10.1063/1.4766541

Demenev, E. ; Giubertoni, D. ; Gennaro, S. et al. / Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. editor / Lourdes Pelaz ; Iván Santos ; Ray Duffy ; Frank Torregrosa ; Konstantin Bourdelle. Vol. 1496 American Institute of Physics Publising LLC, 2012. pp. 272-275 (AIP Conference Proceedings).

@inproceedings{4e0f49dfb01a4bd1a4ae5dad1042a65b,

title = "Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers",

abstract = "The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.",

keywords = "Arsenic, MEIS, pre-amorphization, Silicon, SIMS, SPER",

author = "E. Demenev and D. Giubertoni and S. Gennaro and M. Bersani and E. Hourdakis and Nassiopoulou, {A. G.} and Reading, {M. A.} and {Van Den Berg}, {J. A.}",

year = "2012",

month = nov,

day = "6",

doi = "10.1063/1.4766541",

language = "English",

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booktitle = "Ion Implantation Technology 2012",

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note = "19th IEEE International Conference on Ion Implantation Technology, IIT 2012 ; Conference date: 25-06-2012 Through 29-06-2012",

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Demenev, E, Giubertoni, D, Gennaro, S, Bersani, M, Hourdakis, E, Nassiopoulou, AG, Reading, MA & Van Den Berg, JA 2012, Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. in L Pelaz, I Santos, R Duffy, F Torregrosa & K Bourdelle (eds), Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. vol. 1496, AIP Conference Proceedings, vol. 1496, American Institute of Physics Publising LLC, pp. 272-275, 19th IEEE International Conference on Ion Implantation Technology, Valladolid, Spain, 25/06/12. https://doi.org/10.1063/1.4766541

Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. / Demenev, E.; Giubertoni, D.; Gennaro, S. et al.

Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. ed. / Lourdes Pelaz; Iván Santos; Ray Duffy; Frank Torregrosa; Konstantin Bourdelle. Vol. 1496 American Institute of Physics Publising LLC, 2012. p. 272-275 (AIP Conference Proceedings; Vol. 1496).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

AU - Demenev, E.

AU - Giubertoni, D.

AU - Gennaro, S.

AU - Bersani, M.

AU - Hourdakis, E.

AU - Nassiopoulou, A. G.

AU - Reading, M. A.

AU - Van Den Berg, J. A.

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N2 - The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

AB - The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

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KW - MEIS

KW - pre-amorphization

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KW - SIMS

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VL - 1496

T3 - AIP Conference Proceedings

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BT - Ion Implantation Technology 2012

A2 - Pelaz, Lourdes

A2 - Santos, Iván

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Demenev E, Giubertoni D, Gennaro S, Bersani M, Hourdakis E, Nassiopoulou AG et al. Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. In Pelaz L, Santos I, Duffy R, Torregrosa F, Bourdelle K, editors, Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. Vol. 1496. American Institute of Physics Publising LLC. 2012. p. 272-275. (AIP Conference Proceedings). doi: 10.1063/1.4766541

Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

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