Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

E. Demenev, D. Giubertoni, S. Gennaro, M. Bersani, E. Hourdakis, A. G. Nassiopoulou, M. A. Reading, J. A. Van Den Berg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

Original languageEnglish
Title of host publicationIon Implantation Technology 2012
Subtitle of host publicationProceedings of the 19th International Conference on Ion Implantation Technology
EditorsLourdes Pelaz, Iván Santos, Ray Duffy, Frank Torregrosa, Konstantin Bourdelle
PublisherAmerican Institute of Physics Publising LLC
Pages272-275
Number of pages4
Volume1496
ISBN (Print)9780735411081
DOIs
Publication statusPublished - 6 Nov 2012
Externally publishedYes
Event19th International Conference on Ion Implantation Technology - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012
Conference number: 19

Publication series

NameAIP Conference Proceedings
Volume1496
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Ion Implantation Technology
Abbreviated titleIIT 2012
CountrySpain
CityValladolid
Period25/06/1229/06/12

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arsenic
solid phases
silicon
atoms
dosage
ion scattering
secondary ion mass spectrometry
ion implantation
ions
energy
defects
crystals

Cite this

Demenev, E., Giubertoni, D., Gennaro, S., Bersani, M., Hourdakis, E., Nassiopoulou, A. G., ... Van Den Berg, J. A. (2012). Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. In L. Pelaz, I. Santos, R. Duffy, F. Torregrosa, & K. Bourdelle (Eds.), Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology (Vol. 1496, pp. 272-275). (AIP Conference Proceedings; Vol. 1496). American Institute of Physics Publising LLC. https://doi.org/10.1063/1.4766541
Demenev, E. ; Giubertoni, D. ; Gennaro, S. ; Bersani, M. ; Hourdakis, E. ; Nassiopoulou, A. G. ; Reading, M. A. ; Van Den Berg, J. A. / Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. editor / Lourdes Pelaz ; Iván Santos ; Ray Duffy ; Frank Torregrosa ; Konstantin Bourdelle. Vol. 1496 American Institute of Physics Publising LLC, 2012. pp. 272-275 (AIP Conference Proceedings).
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abstract = "The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.",
keywords = "Arsenic, MEIS, pre-amorphization, Silicon, SIMS, SPER",
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Demenev, E, Giubertoni, D, Gennaro, S, Bersani, M, Hourdakis, E, Nassiopoulou, AG, Reading, MA & Van Den Berg, JA 2012, Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. in L Pelaz, I Santos, R Duffy, F Torregrosa & K Bourdelle (eds), Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. vol. 1496, AIP Conference Proceedings, vol. 1496, American Institute of Physics Publising LLC, pp. 272-275, 19th International Conference on Ion Implantation Technology, Valladolid, Spain, 25/06/12. https://doi.org/10.1063/1.4766541

Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. / Demenev, E.; Giubertoni, D.; Gennaro, S.; Bersani, M.; Hourdakis, E.; Nassiopoulou, A. G.; Reading, M. A.; Van Den Berg, J. A.

Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. ed. / Lourdes Pelaz; Iván Santos; Ray Duffy; Frank Torregrosa; Konstantin Bourdelle. Vol. 1496 American Institute of Physics Publising LLC, 2012. p. 272-275 (AIP Conference Proceedings; Vol. 1496).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers

AU - Demenev, E.

AU - Giubertoni, D.

AU - Gennaro, S.

AU - Bersani, M.

AU - Hourdakis, E.

AU - Nassiopoulou, A. G.

AU - Reading, M. A.

AU - Van Den Berg, J. A.

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N2 - The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

AB - The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported. A 16 nm amorphous layer was created by ion implantation of Si+ at energy 5 keV and a dose 1×1015 at/cm2. As ion were implanted at 2 keV using 3 different doses: 1×1014, 5×1014 and 1×1015 at/cm2. The resulting As distributions, confined in the amorphous layer, were thermally treated at 550°C for 5-300 s in order to electrically activate dopant atoms. Crystal re-growth and As redistribution was investigated by secondary ion mass spectrometry and medium energy ion scattering. A growth rate depending on the As concentration was observed, the rate being slower for higher As content. Arsenic re-distribution to the surface and at the end-of-range defects was observed and a segregation model was developed. Finally, the substitutional fraction of As atoms was related to sheet resistance measurements revealing a higher fraction of electrically active dopant atoms in pre-amorphized samples compared to not pre-amorphized.

KW - Arsenic

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KW - SIMS

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U2 - 10.1063/1.4766541

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SN - 9780735411081

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T3 - AIP Conference Proceedings

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Demenev E, Giubertoni D, Gennaro S, Bersani M, Hourdakis E, Nassiopoulou AG et al. Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers. In Pelaz L, Santos I, Duffy R, Torregrosa F, Bourdelle K, editors, Ion Implantation Technology 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. Vol. 1496. American Institute of Physics Publising LLC. 2012. p. 272-275. (AIP Conference Proceedings). https://doi.org/10.1063/1.4766541