Atom-by-atom STEM investigation of defect engineering in graphene

Quentin Mathieu Ramasse, D. M. Kepapstoglou, F. S. Hage, T. Susi, J. Kotakoski, C. Mangler, P. Ayala, J. Meyer, J. A. Hinks, S. Donnelly, R. Zan, C. T. Pan, S. J. Haigh, U. Bangert

Research output: Contribution to journal › Article

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)1736-1737
Number of pages2
JournalMicroscopy and Microanalysis
Volume20
Issue number3
DOIs
Publication statusPublished - 1 Aug 2014

Cite this

Ramasse, Q. M., Kepapstoglou, D. M., Hage, F. S., Susi, T., Kotakoski, J., Mangler, C., ... Bangert, U. (2014). Atom-by-atom STEM investigation of defect engineering in graphene. Microscopy and Microanalysis, 20(3), 1736-1737. https://doi.org/10.1017/S1431927614010411
Ramasse, Quentin Mathieu ; Kepapstoglou, D. M. ; Hage, F. S. ; Susi, T. ; Kotakoski, J. ; Mangler, C. ; Ayala, P. ; Meyer, J. ; Hinks, J. A. ; Donnelly, S. ; Zan, R. ; Pan, C. T. ; Haigh, S. J. ; Bangert, U. / Atom-by-atom STEM investigation of defect engineering in graphene. In: Microscopy and Microanalysis. 2014 ; Vol. 20, No. 3. pp. 1736-1737.
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title = "Atom-by-atom STEM investigation of defect engineering in graphene",
author = "Ramasse, {Quentin Mathieu} and Kepapstoglou, {D. M.} and Hage, {F. S.} and T. Susi and J. Kotakoski and C. Mangler and P. Ayala and J. Meyer and Hinks, {J. A.} and S. Donnelly and R. Zan and Pan, {C. T.} and Haigh, {S. J.} and U. Bangert",
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month = "8",
day = "1",
doi = "10.1017/S1431927614010411",
language = "English",
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Ramasse, QM, Kepapstoglou, DM, Hage, FS, Susi, T, Kotakoski, J, Mangler, C, Ayala, P, Meyer, J, Hinks, JA, Donnelly, S, Zan, R, Pan, CT, Haigh, SJ & Bangert, U 2014, 'Atom-by-atom STEM investigation of defect engineering in graphene', Microscopy and Microanalysis, vol. 20, no. 3, pp. 1736-1737. https://doi.org/10.1017/S1431927614010411

Atom-by-atom STEM investigation of defect engineering in graphene. / Ramasse, Quentin Mathieu; Kepapstoglou, D. M.; Hage, F. S.; Susi, T.; Kotakoski, J.; Mangler, C.; Ayala, P.; Meyer, J.; Hinks, J. A.; Donnelly, S.; Zan, R.; Pan, C. T.; Haigh, S. J.; Bangert, U.

In: Microscopy and Microanalysis, Vol. 20, No. 3, 01.08.2014, p. 1736-1737.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Atom-by-atom STEM investigation of defect engineering in graphene

AU - Ramasse, Quentin Mathieu

AU - Kepapstoglou, D. M.

AU - Hage, F. S.

AU - Susi, T.

AU - Kotakoski, J.

AU - Mangler, C.

AU - Ayala, P.

AU - Meyer, J.

AU - Hinks, J. A.

AU - Donnelly, S.

AU - Zan, R.

AU - Pan, C. T.

AU - Haigh, S. J.

AU - Bangert, U.

PY - 2014/8/1

Y1 - 2014/8/1

UR - http://www.scopus.com/inward/record.url?scp=84927929832&partnerID=8YFLogxK

U2 - 10.1017/S1431927614010411

DO - 10.1017/S1431927614010411

M3 - Article

VL - 20

SP - 1736

EP - 1737

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - 3

ER -

Ramasse QM, Kepapstoglou DM, Hage FS, Susi T, Kotakoski J, Mangler C et al. Atom-by-atom STEM investigation of defect engineering in graphene. Microscopy and Microanalysis. 2014 Aug 1;20(3):1736-1737. https://doi.org/10.1017/S1431927614010411

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