Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Mihaela Popovici; Benjamin Groven; Kristof Marcoen; Quan Manh Phung; Shibesh Dutta; Johan Swerts; Johan Meersschaut; Jaap A. van den Berg; Alexis Franquet; Alain Moussa; Kris Vanstreels; Pieter Lagrain; Hugo Bender; Malgorzata Jurczak; Sven Van Elshocht; Annelies Delabie; Christoph Adelmann

doi:10.1021/acs.chemmater.6b05437

Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Mihaela Popovici, Benjamin Groven, Kristof Marcoen, Quan Manh Phung, Shibesh Dutta, Johan Swerts, Johan Meersschaut, Jaap A. van den Berg, Alexis Franquet, Alain Moussa, Kris Vanstreels, Pieter Lagrain, Hugo Bender, Malgorzata Jurczak, Sven Van Elshocht, Annelies Delabie, Christoph Adelmann

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm

Original language	English
Pages (from-to)	4654-4666
Number of pages	13
Journal	Chemistry of Materials
Volume	29
Issue number	11
Early online date	23 May 2017
DOIs	https://doi.org/10.1021/acs.chemmater.6b05437
Publication status	Published - 13 Jun 2017

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Popovici, M., Groven, B., Marcoen, K., Phung, Q. M., Dutta, S., Swerts, J., ... Adelmann, C. (2017). Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties. Chemistry of Materials, 29(11), 4654-4666. https://doi.org/10.1021/acs.chemmater.6b05437

Popovici, Mihaela ; Groven, Benjamin ; Marcoen, Kristof ; Phung, Quan Manh ; Dutta, Shibesh ; Swerts, Johan ; Meersschaut, Johan ; van den Berg, Jaap A. ; Franquet, Alexis ; Moussa, Alain ; Vanstreels, Kris ; Lagrain, Pieter ; Bender, Hugo ; Jurczak, Malgorzata ; Van Elshocht, Sven ; Delabie, Annelies ; Adelmann, Christoph. / Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru : Process Characteristics, Surface Chemistry, and Film Properties. In: Chemistry of Materials. 2017 ; Vol. 29, No. 11. pp. 4654-4666.

@article{5bbe5594a58e4232abc06986268fe250,

title = "Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties",

abstract = "The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm",

author = "Mihaela Popovici and Benjamin Groven and Kristof Marcoen and Phung, {Quan Manh} and Shibesh Dutta and Johan Swerts and Johan Meersschaut and {van den Berg}, {Jaap A.} and Alexis Franquet and Alain Moussa and Kris Vanstreels and Pieter Lagrain and Hugo Bender and Malgorzata Jurczak and {Van Elshocht}, Sven and Annelies Delabie and Christoph Adelmann",

year = "2017",

month = "6",

day = "13",

doi = "10.1021/acs.chemmater.6b05437",

language = "English",

volume = "29",

pages = "4654--4666",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "11",

}

Popovici, M, Groven, B, Marcoen, K, Phung, QM, Dutta, S, Swerts, J, Meersschaut, J, van den Berg, JA, Franquet, A, Moussa, A, Vanstreels, K, Lagrain, P, Bender, H, Jurczak, M, Van Elshocht, S, Delabie, A & Adelmann, C 2017, 'Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties', Chemistry of Materials, vol. 29, no. 11, pp. 4654-4666. https://doi.org/10.1021/acs.chemmater.6b05437

Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru : Process Characteristics, Surface Chemistry, and Film Properties. / Popovici, Mihaela; Groven, Benjamin; Marcoen, Kristof; Phung, Quan Manh; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; van den Berg, Jaap A.; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Malgorzata; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph.

In: Chemistry of Materials, Vol. 29, No. 11, 13.06.2017, p. 4654-4666.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru

T2 - Process Characteristics, Surface Chemistry, and Film Properties

AU - Popovici, Mihaela

AU - Groven, Benjamin

AU - Marcoen, Kristof

AU - Phung, Quan Manh

AU - Dutta, Shibesh

AU - Swerts, Johan

AU - Meersschaut, Johan

AU - van den Berg, Jaap A.

AU - Franquet, Alexis

AU - Moussa, Alain

AU - Vanstreels, Kris

AU - Lagrain, Pieter

AU - Bender, Hugo

AU - Jurczak, Malgorzata

AU - Van Elshocht, Sven

AU - Delabie, Annelies

AU - Adelmann, Christoph

PY - 2017/6/13

Y1 - 2017/6/13

N2 - The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm

AB - The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm

U2 - 10.1021/acs.chemmater.6b05437

DO - 10.1021/acs.chemmater.6b05437

M3 - Article

VL - 29

SP - 4654

EP - 4666

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 11

ER -

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10.1021/acs.chemmater.6b05437