Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Mihaela Popovici, Benjamin Groven, Kristof Marcoen, Quan Manh Phung, Shibesh Dutta, Johan Swerts, Johan Meersschaut, Jaap A. van den Berg, Alexis Franquet, Alain Moussa, Kris Vanstreels, Pieter Lagrain, Hugo Bender, Malgorzata Jurczak, Sven Van Elshocht, Annelies Delabie, Christoph Adelmann

Research output: Contribution to journalArticle

18 Citations (Scopus)


The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm
Original languageEnglish
Pages (from-to)4654-4666
Number of pages13
JournalChemistry of Materials
Issue number11
Early online date23 May 2017
Publication statusPublished - 13 Jun 2017


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