Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 4654-4666 |
| Number of pages | 13 |
| Journal | Chemistry of Materials |
| Volume | 29 |
| Issue number | 11 |
| Early online date | 23 May 2017 |
| DOIs | |
| Publication status | Published - 13 Jun 2017 |
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Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru : Process Characteristics, Surface Chemistry, and Film Properties. / Popovici, Mihaela; Groven, Benjamin; Marcoen, Kristof; Phung, Quan Manh; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; van den Berg, Jaap A.; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Malgorzata; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph.
In: Chemistry of Materials, Vol. 29, No. 11, 13.06.2017, p. 4654-4666.Research output: Contribution to journal › Article
TY - JOUR
T1 - Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru
T2 - Process Characteristics, Surface Chemistry, and Film Properties
AU - Popovici, Mihaela
AU - Groven, Benjamin
AU - Marcoen, Kristof
AU - Phung, Quan Manh
AU - Dutta, Shibesh
AU - Swerts, Johan
AU - Meersschaut, Johan
AU - van den Berg, Jaap A.
AU - Franquet, Alexis
AU - Moussa, Alain
AU - Vanstreels, Kris
AU - Lagrain, Pieter
AU - Bender, Hugo
AU - Jurczak, Malgorzata
AU - Van Elshocht, Sven
AU - Delabie, Annelies
AU - Adelmann, Christoph
PY - 2017/6/13
Y1 - 2017/6/13
N2 - The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm
AB - The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm
U2 - 10.1021/acs.chemmater.6b05437
DO - 10.1021/acs.chemmater.6b05437
M3 - Article
VL - 29
SP - 4654
EP - 4666
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 11
ER -