Atomic layer deposition of Ti-HfO2 dielectrics

Matthew Werner, Peter J. King, Sarah Hindley, Simon Romani, Sean Mather, Paul R. Chalker, Paul A. Williams, Jakob A. Van Den Berg

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Titanium-doped hafnium oxide films, TixHf1-xO 2-δ, have been deposited with a Ti content of x = 0.1 and x = 0.5, by atomic layer deposition. The TixHf1-xO 2-δ growth rate is lower compared with the growth rates of the individual binary oxides; however, the composition of the films is unaffected by the reduced growth rate. An 850 °C spike anneal and a 500 °C 30 min furnace anneal were performed, and the resulting film composition and structure was determined using medium energy ion scattering, x-ray diffraction, and transmission electron microscopy. The Ti0.1Hf0.9O 2-δ films readily crystallize into a monoclinic phase during both types of annealing. By contrast, the Ti0.5Hf0.5O 2-δ films remain amorphous during both annealing processes. Electrical characterization of the as-deposited Ti0.1Hf 0.9O2-δ films yielded a dielectric constant of 20, which is slightly higher than undoped HfO2 films. The as-deposited Ti0.5Hf0.5O2-δ films showed a significant increase in dielectric constant up to 35. After a 500 °C 30 min anneal, the dielectric constant reduced slightly to 27. The leakage current density of the amorphous film remains relatively unaffected at 8.7×10-7 A/cm2 at -1 MV/cm, suggesting this composition/heat treatment is a candidate for future device dielectrics. © 2013 American Vacuum Society.
Original languageEnglish
JournalJournal of Vacuum Science and Technology A
Volume31
Issue number1
DOIs
Publication statusPublished - Jan 2013

Fingerprint

Atomic layer deposition
Permittivity
Amorphous films
Dielectric devices
Chemical analysis
Hafnium oxides
Annealing
Leakage currents
Oxide films
Furnaces
Current density
Titanium
Diffraction
Heat treatment
Vacuum
Scattering
Transmission electron microscopy
X rays
Oxides
Ions

Cite this

Werner, Matthew ; King, Peter J. ; Hindley, Sarah ; Romani, Simon ; Mather, Sean ; Chalker, Paul R. ; Williams, Paul A. ; Van Den Berg, Jakob A. / Atomic layer deposition of Ti-HfO2 dielectrics. In: Journal of Vacuum Science and Technology A. 2013 ; Vol. 31, No. 1.
@article{da8c6006c83649deaeab2c0f72643982,
title = "Atomic layer deposition of Ti-HfO2 dielectrics",
abstract = "Titanium-doped hafnium oxide films, TixHf1-xO 2-δ, have been deposited with a Ti content of x = 0.1 and x = 0.5, by atomic layer deposition. The TixHf1-xO 2-δ growth rate is lower compared with the growth rates of the individual binary oxides; however, the composition of the films is unaffected by the reduced growth rate. An 850 °C spike anneal and a 500 °C 30 min furnace anneal were performed, and the resulting film composition and structure was determined using medium energy ion scattering, x-ray diffraction, and transmission electron microscopy. The Ti0.1Hf0.9O 2-δ films readily crystallize into a monoclinic phase during both types of annealing. By contrast, the Ti0.5Hf0.5O 2-δ films remain amorphous during both annealing processes. Electrical characterization of the as-deposited Ti0.1Hf 0.9O2-δ films yielded a dielectric constant of 20, which is slightly higher than undoped HfO2 films. The as-deposited Ti0.5Hf0.5O2-δ films showed a significant increase in dielectric constant up to 35. After a 500 °C 30 min anneal, the dielectric constant reduced slightly to 27. The leakage current density of the amorphous film remains relatively unaffected at 8.7×10-7 A/cm2 at -1 MV/cm, suggesting this composition/heat treatment is a candidate for future device dielectrics. {\circledC} 2013 American Vacuum Society.",
author = "Matthew Werner and King, {Peter J.} and Sarah Hindley and Simon Romani and Sean Mather and Chalker, {Paul R.} and Williams, {Paul A.} and {Van Den Berg}, {Jakob A.}",
year = "2013",
month = "1",
doi = "10.1116/1.4748570",
language = "English",
volume = "31",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "1",

}

Werner, M, King, PJ, Hindley, S, Romani, S, Mather, S, Chalker, PR, Williams, PA & Van Den Berg, JA 2013, 'Atomic layer deposition of Ti-HfO2 dielectrics', Journal of Vacuum Science and Technology A, vol. 31, no. 1. https://doi.org/10.1116/1.4748570

Atomic layer deposition of Ti-HfO2 dielectrics. / Werner, Matthew; King, Peter J.; Hindley, Sarah; Romani, Simon; Mather, Sean; Chalker, Paul R.; Williams, Paul A.; Van Den Berg, Jakob A.

In: Journal of Vacuum Science and Technology A, Vol. 31, No. 1, 01.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic layer deposition of Ti-HfO2 dielectrics

AU - Werner, Matthew

AU - King, Peter J.

AU - Hindley, Sarah

AU - Romani, Simon

AU - Mather, Sean

AU - Chalker, Paul R.

AU - Williams, Paul A.

AU - Van Den Berg, Jakob A.

PY - 2013/1

Y1 - 2013/1

N2 - Titanium-doped hafnium oxide films, TixHf1-xO 2-δ, have been deposited with a Ti content of x = 0.1 and x = 0.5, by atomic layer deposition. The TixHf1-xO 2-δ growth rate is lower compared with the growth rates of the individual binary oxides; however, the composition of the films is unaffected by the reduced growth rate. An 850 °C spike anneal and a 500 °C 30 min furnace anneal were performed, and the resulting film composition and structure was determined using medium energy ion scattering, x-ray diffraction, and transmission electron microscopy. The Ti0.1Hf0.9O 2-δ films readily crystallize into a monoclinic phase during both types of annealing. By contrast, the Ti0.5Hf0.5O 2-δ films remain amorphous during both annealing processes. Electrical characterization of the as-deposited Ti0.1Hf 0.9O2-δ films yielded a dielectric constant of 20, which is slightly higher than undoped HfO2 films. The as-deposited Ti0.5Hf0.5O2-δ films showed a significant increase in dielectric constant up to 35. After a 500 °C 30 min anneal, the dielectric constant reduced slightly to 27. The leakage current density of the amorphous film remains relatively unaffected at 8.7×10-7 A/cm2 at -1 MV/cm, suggesting this composition/heat treatment is a candidate for future device dielectrics. © 2013 American Vacuum Society.

AB - Titanium-doped hafnium oxide films, TixHf1-xO 2-δ, have been deposited with a Ti content of x = 0.1 and x = 0.5, by atomic layer deposition. The TixHf1-xO 2-δ growth rate is lower compared with the growth rates of the individual binary oxides; however, the composition of the films is unaffected by the reduced growth rate. An 850 °C spike anneal and a 500 °C 30 min furnace anneal were performed, and the resulting film composition and structure was determined using medium energy ion scattering, x-ray diffraction, and transmission electron microscopy. The Ti0.1Hf0.9O 2-δ films readily crystallize into a monoclinic phase during both types of annealing. By contrast, the Ti0.5Hf0.5O 2-δ films remain amorphous during both annealing processes. Electrical characterization of the as-deposited Ti0.1Hf 0.9O2-δ films yielded a dielectric constant of 20, which is slightly higher than undoped HfO2 films. The as-deposited Ti0.5Hf0.5O2-δ films showed a significant increase in dielectric constant up to 35. After a 500 °C 30 min anneal, the dielectric constant reduced slightly to 27. The leakage current density of the amorphous film remains relatively unaffected at 8.7×10-7 A/cm2 at -1 MV/cm, suggesting this composition/heat treatment is a candidate for future device dielectrics. © 2013 American Vacuum Society.

UR - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871863248&doi=10.1116%2f1.4748570&partnerID=40&md5=a0a4db5fa9375dd0b06dd0c4ffb03d84

U2 - 10.1116/1.4748570

DO - 10.1116/1.4748570

M3 - Article

VL - 31

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 1

ER -

Werner M, King PJ, Hindley S, Romani S, Mather S, Chalker PR et al. Atomic layer deposition of Ti-HfO2 dielectrics. Journal of Vacuum Science and Technology A. 2013 Jan;31(1). https://doi.org/10.1116/1.4748570