Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Focused Ion Beam (FIB) has been demonstrated as a promising tool to the fabrication of micro- and nanoscale diamond cutting tools. In-depth understanding of the ion-solid interaction in diamond leading to residual damage under different processing parameters are in high demand for the fabrication of nanoscale diamond tools. Molecular dynamics (MD) simulation method has long been regarded as a powerful and effective tool for analysing atomistic interactions with regard to its capacity of tracking each atom dynamically. Developing on the previous research work on single ion collision process in diamond, a novel Gauss random distribution multi-particle collision MD model was developed in this paper to study FIB-induced damage in diamond under various ion irradiation conditions. A multi-timestep algorithm was developed to control the whole collision process. The results show that the proposed model can effectively track the impulse of each single ion leads to atomic displacements in diamond and finally to a U-shape residual damaged layer at the core irradiation area. The multi-timestep algorithm can increase the computing efficiency by 12 times while still holding high simulation accuracy in terms of the thickness of residual damaged layer and the range of incident gallium distribution. The simulation model was further used to study the ion-induced damage layer in diamond under various beam voltages (5 kV, 8 kV, and 16 kV) and incident angles (0°, 15°, 30°, and 45°). Less damage range were found under the beam energy of 5 kV with the ion incident angle of 45°, which indicated that a post ion beam polishing process (low beam energy with large incident angle) would be an effective way in practice to remove/minimise the residual damage layer when shaping the diamond cutting tools.

LanguageEnglish
Title of host publicationProceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017
EditorsD. Phillips
Publishereuspen
Pages95-96
Number of pages2
ISBN (Electronic)9780995775107
Publication statusPublished - 26 May 2017
Event17th International Conference of the European Society for Precision Engineering and Nanotechnology - Hannover Congress Centre, Hannover, Germany
Duration: 29 May 20172 Jun 2017
Conference number: 17
http://www.euspen.eu/events/17th-international-conference-exhibition/ (Link to Conference Website )

Conference

Conference17th International Conference of the European Society for Precision Engineering and Nanotechnology
Abbreviated titleEUSPEN 2017
CountryGermany
CityHannover
Period29/05/172/06/17
Internet address

Fingerprint

Diamond cutting tools
Diamond
Focused ion beams
Ion bombardment
ion irradiation
Diamonds
diamonds
ion beams
damage
Ions
Molecular dynamics
ions
Fabrication
Gallium
molecular dynamics
Polishing
Ion beams
particle collisions
fabrication
collisions

Cite this

Tong, Z., Jiang, X., Bai, Q., & Blunt, L. (2017). Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions. In D. Phillips (Ed.), Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017 (pp. 95-96). euspen.
Tong, Zhen ; Jiang, Xiangqian ; Bai, Qingshun ; Blunt, Liam. / Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions. Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017. editor / D. Phillips. euspen, 2017. pp. 95-96
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title = "Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions",
abstract = "Focused Ion Beam (FIB) has been demonstrated as a promising tool to the fabrication of micro- and nanoscale diamond cutting tools. In-depth understanding of the ion-solid interaction in diamond leading to residual damage under different processing parameters are in high demand for the fabrication of nanoscale diamond tools. Molecular dynamics (MD) simulation method has long been regarded as a powerful and effective tool for analysing atomistic interactions with regard to its capacity of tracking each atom dynamically. Developing on the previous research work on single ion collision process in diamond, a novel Gauss random distribution multi-particle collision MD model was developed in this paper to study FIB-induced damage in diamond under various ion irradiation conditions. A multi-timestep algorithm was developed to control the whole collision process. The results show that the proposed model can effectively track the impulse of each single ion leads to atomic displacements in diamond and finally to a U-shape residual damaged layer at the core irradiation area. The multi-timestep algorithm can increase the computing efficiency by 12 times while still holding high simulation accuracy in terms of the thickness of residual damaged layer and the range of incident gallium distribution. The simulation model was further used to study the ion-induced damage layer in diamond under various beam voltages (5 kV, 8 kV, and 16 kV) and incident angles (0°, 15°, 30°, and 45°). Less damage range were found under the beam energy of 5 kV with the ion incident angle of 45°, which indicated that a post ion beam polishing process (low beam energy with large incident angle) would be an effective way in practice to remove/minimise the residual damage layer when shaping the diamond cutting tools.",
keywords = "Diamond cutting tools, Focused ion beam, Irradiation damage, Molecular dynamics",
author = "Zhen Tong and Xiangqian Jiang and Qingshun Bai and Liam Blunt",
year = "2017",
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day = "26",
language = "English",
pages = "95--96",
editor = "D. Phillips",
booktitle = "Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017",
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Tong, Z, Jiang, X, Bai, Q & Blunt, L 2017, Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions. in D Phillips (ed.), Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017. euspen, pp. 95-96, 17th International Conference of the European Society for Precision Engineering and Nanotechnology, Hannover, Germany, 29/05/17.

Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions. / Tong, Zhen; Jiang, Xiangqian; Bai, Qingshun; Blunt, Liam.

Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017. ed. / D. Phillips. euspen, 2017. p. 95-96.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions

AU - Tong, Zhen

AU - Jiang, Xiangqian

AU - Bai, Qingshun

AU - Blunt, Liam

PY - 2017/5/26

Y1 - 2017/5/26

N2 - Focused Ion Beam (FIB) has been demonstrated as a promising tool to the fabrication of micro- and nanoscale diamond cutting tools. In-depth understanding of the ion-solid interaction in diamond leading to residual damage under different processing parameters are in high demand for the fabrication of nanoscale diamond tools. Molecular dynamics (MD) simulation method has long been regarded as a powerful and effective tool for analysing atomistic interactions with regard to its capacity of tracking each atom dynamically. Developing on the previous research work on single ion collision process in diamond, a novel Gauss random distribution multi-particle collision MD model was developed in this paper to study FIB-induced damage in diamond under various ion irradiation conditions. A multi-timestep algorithm was developed to control the whole collision process. The results show that the proposed model can effectively track the impulse of each single ion leads to atomic displacements in diamond and finally to a U-shape residual damaged layer at the core irradiation area. The multi-timestep algorithm can increase the computing efficiency by 12 times while still holding high simulation accuracy in terms of the thickness of residual damaged layer and the range of incident gallium distribution. The simulation model was further used to study the ion-induced damage layer in diamond under various beam voltages (5 kV, 8 kV, and 16 kV) and incident angles (0°, 15°, 30°, and 45°). Less damage range were found under the beam energy of 5 kV with the ion incident angle of 45°, which indicated that a post ion beam polishing process (low beam energy with large incident angle) would be an effective way in practice to remove/minimise the residual damage layer when shaping the diamond cutting tools.

AB - Focused Ion Beam (FIB) has been demonstrated as a promising tool to the fabrication of micro- and nanoscale diamond cutting tools. In-depth understanding of the ion-solid interaction in diamond leading to residual damage under different processing parameters are in high demand for the fabrication of nanoscale diamond tools. Molecular dynamics (MD) simulation method has long been regarded as a powerful and effective tool for analysing atomistic interactions with regard to its capacity of tracking each atom dynamically. Developing on the previous research work on single ion collision process in diamond, a novel Gauss random distribution multi-particle collision MD model was developed in this paper to study FIB-induced damage in diamond under various ion irradiation conditions. A multi-timestep algorithm was developed to control the whole collision process. The results show that the proposed model can effectively track the impulse of each single ion leads to atomic displacements in diamond and finally to a U-shape residual damaged layer at the core irradiation area. The multi-timestep algorithm can increase the computing efficiency by 12 times while still holding high simulation accuracy in terms of the thickness of residual damaged layer and the range of incident gallium distribution. The simulation model was further used to study the ion-induced damage layer in diamond under various beam voltages (5 kV, 8 kV, and 16 kV) and incident angles (0°, 15°, 30°, and 45°). Less damage range were found under the beam energy of 5 kV with the ion incident angle of 45°, which indicated that a post ion beam polishing process (low beam energy with large incident angle) would be an effective way in practice to remove/minimise the residual damage layer when shaping the diamond cutting tools.

KW - Diamond cutting tools

KW - Focused ion beam

KW - Irradiation damage

KW - Molecular dynamics

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M3 - Conference contribution

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BT - Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017

A2 - Phillips, D.

PB - euspen

ER -

Tong Z, Jiang X, Bai Q, Blunt L. Atomistic investigation of FIB-induced damage in diamond cutting tools under various ion irradiation conditions. In Phillips D, editor, Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2017. euspen. 2017. p. 95-96