Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si

Pedro López, Lourdes Pelaz, Luis A. Marqués, Iván Santos, J. A. Van Den Berg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.

Original languageEnglish
Title of host publication2007 Spanish Conference on Electron Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-24
Number of pages4
ISBN (Print)1424408687, 9781424408689
DOIs
Publication statusPublished - 16 Jul 2007
Externally publishedYes
Event2007 Spanish Conference on Electron Devices - Madrid, Spain
Duration: 31 Jan 20072 Feb 2007

Conference

Conference2007 Spanish Conference on Electron Devices
Abbreviated titleSCED
CountrySpain
CityMadrid
Period31/01/072/02/07

Fingerprint

damage
simulation
Ions
Topology
proximity
interstitials
ions
topology
room temperature
profiles
Temperature
energy

Cite this

López, P., Pelaz, L., Marqués, L. A., Santos, I., & Van Den Berg, J. A. (2007). Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si. In 2007 Spanish Conference on Electron Devices (pp. 21-24). [4271158] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SCED.2007.383987
López, Pedro ; Pelaz, Lourdes ; Marqués, Luis A. ; Santos, Iván ; Van Den Berg, J. A. / Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si. 2007 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers Inc., 2007. pp. 21-24
@inproceedings{8ac1accd91a74dfaa1e215e38db9220c,
title = "Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si",
abstract = "We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.",
keywords = "Atomistic simulation, Damage accumulation, Dynamic annealing, Shallow B and As implant",
author = "Pedro L{\'o}pez and Lourdes Pelaz and Marqu{\'e}s, {Luis A.} and Iv{\'a}n Santos and {Van Den Berg}, {J. A.}",
year = "2007",
month = "7",
day = "16",
doi = "10.1109/SCED.2007.383987",
language = "English",
isbn = "1424408687",
pages = "21--24",
booktitle = "2007 Spanish Conference on Electron Devices",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

López, P, Pelaz, L, Marqués, LA, Santos, I & Van Den Berg, JA 2007, Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si. in 2007 Spanish Conference on Electron Devices., 4271158, Institute of Electrical and Electronics Engineers Inc., pp. 21-24, 2007 Spanish Conference on Electron Devices, Madrid, Spain, 31/01/07. https://doi.org/10.1109/SCED.2007.383987

Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si. / López, Pedro; Pelaz, Lourdes; Marqués, Luis A.; Santos, Iván; Van Den Berg, J. A.

2007 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers Inc., 2007. p. 21-24 4271158.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si

AU - López, Pedro

AU - Pelaz, Lourdes

AU - Marqués, Luis A.

AU - Santos, Iván

AU - Van Den Berg, J. A.

PY - 2007/7/16

Y1 - 2007/7/16

N2 - We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.

AB - We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.

KW - Atomistic simulation

KW - Damage accumulation

KW - Dynamic annealing

KW - Shallow B and As implant

UR - http://www.scopus.com/inward/record.url?scp=35148819373&partnerID=8YFLogxK

U2 - 10.1109/SCED.2007.383987

DO - 10.1109/SCED.2007.383987

M3 - Conference contribution

AN - SCOPUS:35148819373

SN - 1424408687

SN - 9781424408689

SP - 21

EP - 24

BT - 2007 Spanish Conference on Electron Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

López P, Pelaz L, Marqués LA, Santos I, Van Den Berg JA. Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si. In 2007 Spanish Conference on Electron Devices. Institute of Electrical and Electronics Engineers Inc. 2007. p. 21-24. 4271158 https://doi.org/10.1109/SCED.2007.383987