Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si

Pedro López, Lourdes Pelaz, Luis A. Marqués, Iván Santos, J. A. Van Den Berg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.

Original languageEnglish
Title of host publication2007 Spanish Conference on Electron Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-24
Number of pages4
ISBN (Print)1424408687, 9781424408689
DOIs
Publication statusPublished - 16 Jul 2007
Externally publishedYes
Event2007 Spanish Conference on Electron Devices - Madrid, Spain
Duration: 31 Jan 20072 Feb 2007

Conference

Conference2007 Spanish Conference on Electron Devices
Abbreviated titleSCED
CountrySpain
CityMadrid
Period31/01/072/02/07

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López, P., Pelaz, L., Marqués, L. A., Santos, I., & Van Den Berg, J. A. (2007). Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si. In 2007 Spanish Conference on Electron Devices (pp. 21-24). [4271158] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SCED.2007.383987