Ballistic-damage-induced size changes in equilibrium and under-pressurized Xe precipitates in amorphous silica

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Abstract

This work explores the behaviour of xenon precipitates in amorphous silica using a transmission electron microscope with in-situ ion implantation. The specimens were first implanted at high-temperature to form equilibrium Xe precipitates which were then cooled to room temperature to form under-pressurized precipitates. In-situ implantation and real-time monitoring at high and room temperature were used to study the behaviour of the equilibrium and under-pressurized precipitates, respectively. The study at high-temperature revealed that the precipitates grow under equilibrium conditions until saturation is reached. Subsequent to precipitate growth under equilibrium conditions, the specimens contain a mixture of equilibrium, under-pressurized and possibly over-pressurized precipitates in addition to voids. Unlike precipitates growth at high-temperature (873 K), under-pressurized precipitates, formed after cooling the specimen implanted at 873 K to room temperature, considerably shrank when subjected to further ion implantation. The shrinkage continued until a new equilibrium state defined by the room temperature density of the Xe precipitates was achieved. We discuss the growth and shrinkage of the precipitates in terms of the ballistic thermal spike which initiates Xe diffusion from the matrix into the precipitates at high-temperature and convective flow of the glass towards the under-pressurized precipitates and voids causing their shrinkage at room temperature.

LanguageEnglish
Pages229-238
Number of pages10
JournalJournal of Nuclear Materials
Volume519
Early online date29 Mar 2019
DOIs
Publication statusPublished - 1 Jun 2019

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Ballistics
Silicon Dioxide
ballistics
Precipitates
precipitates
Silica
silicon dioxide
damage
shrinkage
Temperature
room temperature
Ion implantation
ion implantation
voids
Xenon
convective flow
spikes
xenon
implantation
Electron microscopes

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title = "Ballistic-damage-induced size changes in equilibrium and under-pressurized Xe precipitates in amorphous silica",
abstract = "This work explores the behaviour of xenon precipitates in amorphous silica using a transmission electron microscope with in-situ ion implantation. The specimens were first implanted at high-temperature to form equilibrium Xe precipitates which were then cooled to room temperature to form under-pressurized precipitates. In-situ implantation and real-time monitoring at high and room temperature were used to study the behaviour of the equilibrium and under-pressurized precipitates, respectively. The study at high-temperature revealed that the precipitates grow under equilibrium conditions until saturation is reached. Subsequent to precipitate growth under equilibrium conditions, the specimens contain a mixture of equilibrium, under-pressurized and possibly over-pressurized precipitates in addition to voids. Unlike precipitates growth at high-temperature (873 K), under-pressurized precipitates, formed after cooling the specimen implanted at 873 K to room temperature, considerably shrank when subjected to further ion implantation. The shrinkage continued until a new equilibrium state defined by the room temperature density of the Xe precipitates was achieved. We discuss the growth and shrinkage of the precipitates in terms of the ballistic thermal spike which initiates Xe diffusion from the matrix into the precipitates at high-temperature and convective flow of the glass towards the under-pressurized precipitates and voids causing their shrinkage at room temperature.",
keywords = "TEM, Irradiation, Xenon, Precipitates, Bubbles, Silica",
author = "Mir, {Anamul Haq} and Jonathan Hinks and Stephen Donnelly",
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T1 - Ballistic-damage-induced size changes in equilibrium and under-pressurized Xe precipitates in amorphous silica

AU - Mir, Anamul Haq

AU - Hinks, Jonathan

AU - Donnelly, Stephen

PY - 2019/6/1

Y1 - 2019/6/1

N2 - This work explores the behaviour of xenon precipitates in amorphous silica using a transmission electron microscope with in-situ ion implantation. The specimens were first implanted at high-temperature to form equilibrium Xe precipitates which were then cooled to room temperature to form under-pressurized precipitates. In-situ implantation and real-time monitoring at high and room temperature were used to study the behaviour of the equilibrium and under-pressurized precipitates, respectively. The study at high-temperature revealed that the precipitates grow under equilibrium conditions until saturation is reached. Subsequent to precipitate growth under equilibrium conditions, the specimens contain a mixture of equilibrium, under-pressurized and possibly over-pressurized precipitates in addition to voids. Unlike precipitates growth at high-temperature (873 K), under-pressurized precipitates, formed after cooling the specimen implanted at 873 K to room temperature, considerably shrank when subjected to further ion implantation. The shrinkage continued until a new equilibrium state defined by the room temperature density of the Xe precipitates was achieved. We discuss the growth and shrinkage of the precipitates in terms of the ballistic thermal spike which initiates Xe diffusion from the matrix into the precipitates at high-temperature and convective flow of the glass towards the under-pressurized precipitates and voids causing their shrinkage at room temperature.

AB - This work explores the behaviour of xenon precipitates in amorphous silica using a transmission electron microscope with in-situ ion implantation. The specimens were first implanted at high-temperature to form equilibrium Xe precipitates which were then cooled to room temperature to form under-pressurized precipitates. In-situ implantation and real-time monitoring at high and room temperature were used to study the behaviour of the equilibrium and under-pressurized precipitates, respectively. The study at high-temperature revealed that the precipitates grow under equilibrium conditions until saturation is reached. Subsequent to precipitate growth under equilibrium conditions, the specimens contain a mixture of equilibrium, under-pressurized and possibly over-pressurized precipitates in addition to voids. Unlike precipitates growth at high-temperature (873 K), under-pressurized precipitates, formed after cooling the specimen implanted at 873 K to room temperature, considerably shrank when subjected to further ion implantation. The shrinkage continued until a new equilibrium state defined by the room temperature density of the Xe precipitates was achieved. We discuss the growth and shrinkage of the precipitates in terms of the ballistic thermal spike which initiates Xe diffusion from the matrix into the precipitates at high-temperature and convective flow of the glass towards the under-pressurized precipitates and voids causing their shrinkage at room temperature.

KW - TEM

KW - Irradiation

KW - Xenon

KW - Precipitates

KW - Bubbles

KW - Silica

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