Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

S. Wirths; A. T. Tiedemann; Z. Ikonic; P. Harrison; B. Holländer; T. Stoica; G. Mussler; M. Myronov; J. M. Hartmann; D. Grützmacher; D. Buca; S. Mantl

doi:10.1063/1.4805034

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer, T. Stoica, G. Mussler, M. Myronov, J. M. Hartmann, D. Grützmacher, D. Buca, S. Mantl

Research output: Contribution to journal › Article › peer-review

140 Citations (Scopus)

Abstract

In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge _1-xSn_x (x > 9) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.

Original language	English
Article number	192103
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4805034
Publication status	Published - 13 May 2013
Externally published	Yes

Access to Document

10.1063/1.4805034Licence: Unspecified

Cite this

@article{447b7145e7bc43308bc619ef5d07241b,

title = "Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors",

abstract = "In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge 1-xSnx (x > 9) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.",

keywords = "Energy gap, Field effect transistors, Germanium, Heterojunctions, Silicon, Tin",

author = "S. Wirths and Tiedemann, {A. T.} and Z. Ikonic and P. Harrison and B. Holl{\"a}nder and T. Stoica and G. Mussler and M. Myronov and Hartmann, {J. M.} and D. Gr{\"u}tzmacher and D. Buca and S. Mantl",

year = "2013",

month = may,

day = "13",

doi = "10.1063/1.4805034",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

AU - Wirths, S.

AU - Tiedemann, A. T.

AU - Ikonic, Z.

AU - Harrison, P.

AU - Holländer, B.

AU - Stoica, T.

AU - Mussler, G.

AU - Myronov, M.

AU - Hartmann, J. M.

AU - Grützmacher, D.

AU - Buca, D.

AU - Mantl, S.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge 1-xSnx (x > 9) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.

AB - In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge 1-xSnx (x > 9) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.

KW - Energy gap

KW - Field effect transistors

KW - Germanium

KW - Heterojunctions

KW - Silicon

KW - Tin

UR - http://www.scopus.com/inward/record.url?scp=84877974747&partnerID=8YFLogxK

U2 - 10.1063/1.4805034

DO - 10.1063/1.4805034

M3 - Article

AN - SCOPUS:84877974747

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192103

ER -

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this