Band gap renormalization and observation of the type I-type II transition in quantum well systems

T. Stirner, P. Harrison, W. E. Hagston, J. P. Goodwin

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Quantum wells (or barriers) are of finite extent (≤100 Å) along the growth direction. Hence, for at least one or two monolayers adjacent to the interface, the corresponding one-electron potential in the conduction (or valence) band must differ from that appropriate to the bulk material. The present article demonstrates the pronounced effect such short-range "interface potentials" can have on the transition energies and oscillator strengths in a dilute magnetic semiconductor system undergoing a type I-type II transition in an external magnetic field.

Original languageEnglish
Pages (from-to)5081-5087
Number of pages7
JournalJournal of Applied Physics
Volume73
Issue number10
DOIs
Publication statusPublished - 15 May 1993
Externally publishedYes

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