Abstract
Quantum wells (or barriers) are of finite extent (≤100 Å) along the growth direction. Hence, for at least one or two monolayers adjacent to the interface, the corresponding one-electron potential in the conduction (or valence) band must differ from that appropriate to the bulk material. The present article demonstrates the pronounced effect such short-range "interface potentials" can have on the transition energies and oscillator strengths in a dilute magnetic semiconductor system undergoing a type I-type II transition in an external magnetic field.
Original language | English |
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Pages (from-to) | 5081-5087 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 73 |
Issue number | 10 |
DOIs | |
Publication status | Published - 15 May 1993 |
Externally published | Yes |