BER Performance Evaluation of M-PSK and M-QAM Schemes in AWGN, Rayleigh and Rician Fading Channels

Ali Farzamnia, Muralindran Mariappan, Ervin Moung, Ramanan Thangasalvam

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

5 Citations (Scopus)


Wireless communication systems with their vast development rely greatly on the modulation schemes and channel environments. Given the proper channel condition and modulation technique, information can be transmitted with ease and with negligible or no error. Thus, it is necessary to develop an efficient communication system to minimize errors during data transmission. The modulation techniques in communication systems have various performance characteristics such as power efficiency, bandwidth efficiency, and error rate. Some of the common modulation schemes are the M-ary Phase-Shift Keying (M-PSK) and M-ary Quadrature Amplitude Modulation (M-QAM). These techniques are used in the field of communication notably in wireless communication to test and evaluate the performance in fading channels. In this chapter, the Bit Error Rate (BER) performance of both M-PSK and M-QAM modulation schemes under the Additive White Gaussian Noise (AWGN), Rayleigh, and Rician fading channels has been compared. It was found M-QAM modulation scheme gives better performance in terms of data transmission rates and communication reliability when compared to M-PSK modulation scheme.

Original languageEnglish
Title of host publicationControl Engineering in Robotics and Industrial Automation
Subtitle of host publicationMalaysian Society for Automatic Control Engineers (MACE) Technical Series 2018
EditorsMuralindran Mariappan, Mohd Rizal Arshad, Rini Akmeliawati, Chong Shin Chong
PublisherSpringer, Cham
Number of pages10
VolumeSSDC 371
ISBN (Electronic)9783030745400
ISBN (Print)9783030745394, 9783030745424
Publication statusPublished - 14 Aug 2021
Externally publishedYes

Publication series

NameStudies in Systems, Decision and Control
PublisherSpringer Cham
VolumeSSDC 371
ISSN (Print)2198-4182
ISSN (Electronic)2198-4190

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