Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon

E. Demenev; D. Giubertoni; M. A. Reading; P. Bailey; T.C.Q. Noakes; M. Bersani; J.A. Van Den Berg

doi:10.1002/sia.5136

Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon

E. Demenev, D. Giubertoni, M. A. Reading, P. Bailey, T.C.Q. Noakes, M. Bersani, J.A. Van Den Berg

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1 Citation (Scopus)

Abstract

Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra-shallow distributions of arsenic in silicon obtained by ion implantation. A previously developed quantitative model for the correction of results obtained by ultra low energy SIMS was tested on different types of samples. The model deals with the different sputtering regimes in SiO2 and Si and corrects the analysis behaviour at the SiO2/Si interface. Model results were compared with MEIS which yields depth profiles that are more accurate and can be quantified from first principles. The obtained model was tested on samples with or without a pre-amorphization implant step prior to As implantation and subsequently annealed at 550 °C in a partially oxidizing atmosphere. Results show excellent agreement on As peak position and shape; however, MEIS detects differences between profiles of preamorphised and non-preamorphised samples whereas SIMS profiles of these samples are almost identical. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

Original language	English
Pages (from-to)	413-416
Number of pages	4
Journal	Surface and Interface Analysis
Volume	45
Issue number	1
Early online date	25 Jul 2012
DOIs	https://doi.org/10.1002/sia.5136
Publication status	Published - Jan 2013
Externally published	Yes
Event	Eighteenth International Conference on Secondary Ion Mass Spectrometry - Trento, Italy Duration: 18 Sep 2011 → 23 Sep 2011 Conference number: 18

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title = "Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon",

abstract = "Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra-shallow distributions of arsenic in silicon obtained by ion implantation. A previously developed quantitative model for the correction of results obtained by ultra low energy SIMS was tested on different types of samples. The model deals with the different sputtering regimes in SiO2 and Si and corrects the analysis behaviour at the SiO2/Si interface. Model results were compared with MEIS which yields depth profiles that are more accurate and can be quantified from first principles. The obtained model was tested on samples with or without a pre-amorphization implant step prior to As implantation and subsequently annealed at 550 °C in a partially oxidizing atmosphere. Results show excellent agreement on As peak position and shape; however, MEIS detects differences between profiles of preamorphised and non-preamorphised samples whereas SIMS profiles of these samples are almost identical. Copyright {\textcopyright} 2012 John Wiley & Sons, Ltd. Copyright {\textcopyright} 2012 John Wiley & Sons, Ltd.",

keywords = "arsenic in silicon, MEIS, SIMS, ultra-shallow junction",

author = "E. Demenev and D. Giubertoni and Reading, {M. A.} and P. Bailey and T.C.Q. Noakes and M. Bersani and {Van Den Berg}, J.A.",

year = "2013",

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pages = "413--416",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

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T1 - Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon

AU - Demenev, E.

AU - Giubertoni, D.

AU - Reading, M. A.

AU - Bailey, P.

AU - Noakes, T.C.Q.

AU - Bersani, M.

AU - Van Den Berg, J.A.

N1 - Conference code: 18

PY - 2013/1

Y1 - 2013/1

N2 - Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra-shallow distributions of arsenic in silicon obtained by ion implantation. A previously developed quantitative model for the correction of results obtained by ultra low energy SIMS was tested on different types of samples. The model deals with the different sputtering regimes in SiO2 and Si and corrects the analysis behaviour at the SiO2/Si interface. Model results were compared with MEIS which yields depth profiles that are more accurate and can be quantified from first principles. The obtained model was tested on samples with or without a pre-amorphization implant step prior to As implantation and subsequently annealed at 550 °C in a partially oxidizing atmosphere. Results show excellent agreement on As peak position and shape; however, MEIS detects differences between profiles of preamorphised and non-preamorphised samples whereas SIMS profiles of these samples are almost identical. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

AB - Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra-shallow distributions of arsenic in silicon obtained by ion implantation. A previously developed quantitative model for the correction of results obtained by ultra low energy SIMS was tested on different types of samples. The model deals with the different sputtering regimes in SiO2 and Si and corrects the analysis behaviour at the SiO2/Si interface. Model results were compared with MEIS which yields depth profiles that are more accurate and can be quantified from first principles. The obtained model was tested on samples with or without a pre-amorphization implant step prior to As implantation and subsequently annealed at 550 °C in a partially oxidizing atmosphere. Results show excellent agreement on As peak position and shape; however, MEIS detects differences between profiles of preamorphised and non-preamorphised samples whereas SIMS profiles of these samples are almost identical. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd.

KW - arsenic in silicon

KW - MEIS

KW - SIMS

KW - ultra-shallow junction

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DO - 10.1002/sia.5136

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SP - 413

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JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

T2 - Eighteenth International Conference on Secondary Ion Mass Spectrometry

Y2 - 18 September 2011 through 23 September 2011

ER -

Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon

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