Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon

E. Demenev, D. Giubertoni, J. Van Den Berg, M. Reading, M. Bersani

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 0.5-5 keV. MEIS offers the advantage of accurate quantification and ultimate depth resolution <1 nm but the detection limit achievable is always poorer than the one obtained by SIMS. The comparison of the results obtained by the two techniques allows to discriminate among different SIMS quantification processes in order to individuate the best in terms of accuracy in the initial transient width and at the SiO 2-silicon interface and develop quantitative model for SIMS profiles to align them to the curves as determined by MEIS. This model relies on different sputtering condition in SiO 2 (such as sputtering rate and ion yield) and additionally compensates analysis behavior in SiO 2/Si interface.

Original languageEnglish
Pages (from-to)192-194
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume273
DOIs
Publication statusPublished - 15 Feb 2012
Externally publishedYes

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ion scattering
Secondary ion mass spectrometry
Arsenic
arsenic
secondary ion mass spectrometry
Calibration
Scattering
Silicon
Ions
silicon
profiles
Sputtering
sputtering
energy
Ion implantation
ion implantation
curves
ions

Cite this

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title = "Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon",
abstract = "Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 0.5-5 keV. MEIS offers the advantage of accurate quantification and ultimate depth resolution <1 nm but the detection limit achievable is always poorer than the one obtained by SIMS. The comparison of the results obtained by the two techniques allows to discriminate among different SIMS quantification processes in order to individuate the best in terms of accuracy in the initial transient width and at the SiO 2-silicon interface and develop quantitative model for SIMS profiles to align them to the curves as determined by MEIS. This model relies on different sputtering condition in SiO 2 (such as sputtering rate and ion yield) and additionally compensates analysis behavior in SiO 2/Si interface.",
keywords = "Arsenic, Ion implantation, MEIS, Silicon, SIMS, Ultra-shallow junctions",
author = "E. Demenev and D. Giubertoni and {Van Den Berg}, J. and M. Reading and M. Bersani",
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TY - JOUR

T1 - Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon

AU - Demenev, E.

AU - Giubertoni, D.

AU - Van Den Berg, J.

AU - Reading, M.

AU - Bersani, M.

PY - 2012/2/15

Y1 - 2012/2/15

N2 - Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 0.5-5 keV. MEIS offers the advantage of accurate quantification and ultimate depth resolution <1 nm but the detection limit achievable is always poorer than the one obtained by SIMS. The comparison of the results obtained by the two techniques allows to discriminate among different SIMS quantification processes in order to individuate the best in terms of accuracy in the initial transient width and at the SiO 2-silicon interface and develop quantitative model for SIMS profiles to align them to the curves as determined by MEIS. This model relies on different sputtering condition in SiO 2 (such as sputtering rate and ion yield) and additionally compensates analysis behavior in SiO 2/Si interface.

AB - Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 0.5-5 keV. MEIS offers the advantage of accurate quantification and ultimate depth resolution <1 nm but the detection limit achievable is always poorer than the one obtained by SIMS. The comparison of the results obtained by the two techniques allows to discriminate among different SIMS quantification processes in order to individuate the best in terms of accuracy in the initial transient width and at the SiO 2-silicon interface and develop quantitative model for SIMS profiles to align them to the curves as determined by MEIS. This model relies on different sputtering condition in SiO 2 (such as sputtering rate and ion yield) and additionally compensates analysis behavior in SiO 2/Si interface.

KW - Arsenic

KW - Ion implantation

KW - MEIS

KW - Silicon

KW - SIMS

KW - Ultra-shallow junctions

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DO - 10.1016/j.nimb.2011.07.073

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -