Characterisation of low energy antimony (2-5 keV) implantation into silicon

Erik J.H. Collart, David Kirkwood, J. A. Van Den Berg, M. Werner, Wilfried Vandervorst, Bert Brijs, P. Bailey, T. C.Q. Noakes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).

Original languageEnglish
Title of host publication2002 14th International Conference on Ion Implantation Technology
Subtitle of host publicationIIT 2002 - Proceedings
EditorsBob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-150
Number of pages4
ISBN (Electronic)0780371550
DOIs
Publication statusPublished - 1 Oct 2002
Externally publishedYes
Event14th IEEE International Conference on Ion Implantation Technology - Taos, United States
Duration: 22 Sep 200227 Sep 2002
Conference number: 14

Conference

Conference14th IEEE International Conference on Ion Implantation Technology
Abbreviated titleIIT 2002
CountryUnited States
CityTaos
Period22/09/0227/09/02

Fingerprint

Antimony
Sheet resistance
Silicon
Secondary ion mass spectrometry
antimony
implantation
Scattering
Ions
ion scattering
silicon
secondary ion mass spectrometry
damage
energy
profiles

Cite this

Collart, E. J. H., Kirkwood, D., Van Den Berg, J. A., Werner, M., Vandervorst, W., Brijs, B., ... Noakes, T. C. Q. (2002). Characterisation of low energy antimony (2-5 keV) implantation into silicon. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings (pp. 147-150). [1257960] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1257960
Collart, Erik J.H. ; Kirkwood, David ; Van Den Berg, J. A. ; Werner, M. ; Vandervorst, Wilfried ; Brijs, Bert ; Bailey, P. ; Noakes, T. C.Q. / Characterisation of low energy antimony (2-5 keV) implantation into silicon. 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 147-150
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abstract = "Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).",
keywords = "Antimony, component: low energy ion implantation, MEIS, SIMS, USJ formation",
author = "Collart, {Erik J.H.} and David Kirkwood and {Van Den Berg}, {J. A.} and M. Werner and Wilfried Vandervorst and Bert Brijs and P. Bailey and Noakes, {T. C.Q.}",
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Collart, EJH, Kirkwood, D, Van Den Berg, JA, Werner, M, Vandervorst, W, Brijs, B, Bailey, P & Noakes, TCQ 2002, Characterisation of low energy antimony (2-5 keV) implantation into silicon. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings., 1257960, Institute of Electrical and Electronics Engineers Inc., pp. 147-150, 14th IEEE International Conference on Ion Implantation Technology, Taos, United States, 22/09/02. https://doi.org/10.1109/IIT.2002.1257960

Characterisation of low energy antimony (2-5 keV) implantation into silicon. / Collart, Erik J.H.; Kirkwood, David; Van Den Berg, J. A.; Werner, M.; Vandervorst, Wilfried; Brijs, Bert; Bailey, P.; Noakes, T. C.Q.

2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 147-150 1257960.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Collart EJH, Kirkwood D, Van Den Berg JA, Werner M, Vandervorst W, Brijs B et al. Characterisation of low energy antimony (2-5 keV) implantation into silicon. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 147-150. 1257960 https://doi.org/10.1109/IIT.2002.1257960