Characterisation of low energy antimony (2-5 keV) implantation into silicon

Erik J.H. Collart; David Kirkwood; J. A. Van Den Berg; M. Werner; Wilfried Vandervorst; Bert Brijs; P. Bailey; T. C.Q. Noakes

doi:10.1109/IIT.2002.1257960

Characterisation of low energy antimony (2-5 keV) implantation into silicon

Erik J.H. Collart, David Kirkwood, J. A. Van Den Berg, M. Werner, Wilfried Vandervorst, Bert Brijs, P. Bailey, T. C.Q. Noakes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).

Original language	English
Title of host publication	2002 14th International Conference on Ion Implantation Technology
Subtitle of host publication	IIT 2002 - Proceedings
Editors	Bob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-150
Number of pages	4
ISBN (Electronic)	0780371550
DOIs	https://doi.org/10.1109/IIT.2002.1257960
Publication status	Published - 1 Oct 2002
Externally published	Yes
Event	14th IEEE International Conference on Ion Implantation Technology - Taos, United States Duration: 22 Sep 2002 → 27 Sep 2002 Conference number: 14 https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1257923

Conference

Conference	14th IEEE International Conference on Ion Implantation Technology
Abbreviated title	IIT 2002
Country/Territory	United States
City	Taos
Period	22/09/02 → 27/09/02
Internet address	https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1257923

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10.1109/IIT.2002.1257960Licence: Unspecified

Cite this

Collart, E. J. H., Kirkwood, D., Van Den Berg, J. A., Werner, M., Vandervorst, W., Brijs, B., Bailey, P., & Noakes, T. C. Q. (2002). Characterisation of low energy antimony (2-5 keV) implantation into silicon. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings (pp. 147-150). [1257960] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1257960

Collart, Erik J.H. ; Kirkwood, David ; Van Den Berg, J. A. et al. / Characterisation of low energy antimony (2-5 keV) implantation into silicon. 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 147-150

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title = "Characterisation of low energy antimony (2-5 keV) implantation into silicon",

abstract = "Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).",

keywords = "Antimony, component: low energy ion implantation, MEIS, SIMS, USJ formation",

author = "Collart, {Erik J.H.} and David Kirkwood and {Van Den Berg}, {J. A.} and M. Werner and Wilfried Vandervorst and Bert Brijs and P. Bailey and Noakes, {T. C.Q.}",

year = "2002",

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doi = "10.1109/IIT.2002.1257960",

language = "English",

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editor = "Bob Brown and Alford, {Terry L.} and Mike Nastasi and Vella, {Michael C.}",

booktitle = "2002 14th International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",

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Collart, EJH, Kirkwood, D, Van Den Berg, JA, Werner, M, Vandervorst, W, Brijs, B, Bailey, P & Noakes, TCQ 2002, Characterisation of low energy antimony (2-5 keV) implantation into silicon. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings., 1257960, Institute of Electrical and Electronics Engineers Inc., pp. 147-150, 14th IEEE International Conference on Ion Implantation Technology, Taos, New Mexico, United States, 22/09/02. https://doi.org/10.1109/IIT.2002.1257960

Characterisation of low energy antimony (2-5 keV) implantation into silicon. / Collart, Erik J.H.; Kirkwood, David; Van Den Berg, J. A. et al.

2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 147-150 1257960.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Collart, Erik J.H.

AU - Kirkwood, David

AU - Van Den Berg, J. A.

AU - Werner, M.

AU - Vandervorst, Wilfried

AU - Brijs, Bert

AU - Bailey, P.

AU - Noakes, T. C.Q.

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N2 - Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).

AB - Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).

KW - Antimony

KW - component: low energy ion implantation

KW - MEIS

KW - SIMS

KW - USJ formation

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Collart EJH, Kirkwood D, Van Den Berg JA, Werner M, Vandervorst W, Brijs B et al. Characterisation of low energy antimony (2-5 keV) implantation into silicon. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 147-150. 1257960 doi: 10.1109/IIT.2002.1257960

Characterisation of low energy antimony (2-5 keV) implantation into silicon

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