Characterisation of low energy antimony (2-5 keV) implantation into silicon

Erik J.H. Collart, David Kirkwood, J. A. Van Den Berg, M. Werner, Wilfried Vandervorst, Bert Brijs, P. Bailey, T. C.Q. Noakes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Low energy Antimony implants (2 and 5 keV) have been characterised for their potential use in n-type ultra-shallow junction formation. Depth profiles using secondary ion mass spectrometry (SIMS) were combined with electrical sheet resistance data and damage distribution data from medium energy ion scattering (MEIS).

Original languageEnglish
Title of host publication2002 14th International Conference on Ion Implantation Technology
Subtitle of host publicationIIT 2002 - Proceedings
EditorsBob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-150
Number of pages4
ISBN (Electronic)0780371550
DOIs
Publication statusPublished - 1 Oct 2002
Externally publishedYes
Event14th IEEE International Conference on Ion Implantation Technology - Taos, United States
Duration: 22 Sep 200227 Sep 2002
Conference number: 14
https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1257923

Conference

Conference14th IEEE International Conference on Ion Implantation Technology
Abbreviated titleIIT 2002
CountryUnited States
CityTaos
Period22/09/0227/09/02
Internet address

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  • Cite this

    Collart, E. J. H., Kirkwood, D., Van Den Berg, J. A., Werner, M., Vandervorst, W., Brijs, B., Bailey, P., & Noakes, T. C. Q. (2002). Characterisation of low energy antimony (2-5 keV) implantation into silicon. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology: IIT 2002 - Proceedings (pp. 147-150). [1257960] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1257960