Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

J. A. Van Den Berg, D. G. Armour, S. Zhang, S. Whelan, H. Ohno, T. S. Wang, A. G. Cullis, E. H.J. Collart, R. D. Goldberg, P. Bailey, T. C.Q. Noakes

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48 Citations (Scopus)

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