Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures
J. A. Van Den Berg, D. G. Armour, S. Zhang, S. Whelan, H. Ohno, T. S. Wang, A. G. Cullis, E. H.J. Collart, R. D. Goldberg, P. Bailey, T. C.Q. Noakes
Research output: Contribution to journal › Conference article › peer-review
Dive into the research topics of 'Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures'. Together they form a unique fingerprint.