Engineering & Materials Science
Arsenic
100%
Doping (additives)
75%
Scattering
63%
Plasmas
62%
Ions
62%
Silicon
53%
Annealing
33%
Oxides
29%
Depth profiling
18%
Sublimation
15%
Sheet resistance
15%
Ion implantation
15%
Etching
12%
Microelectronics
11%
Throughput
7%
Air
6%
Industry
4%
Physics & Astronomy
ion scattering
80%
arsenic
72%
characterization
37%
silicon
36%
spikes
29%
profiles
26%
dosage
25%
energy
19%
oxides
18%
annealing
17%
wafers
14%
sublimation
10%
caps
10%
microelectronics
9%
solid phases
9%
implantation
8%
surface layers
8%
energy spectra
8%
industries
8%
fluence
8%
etching
7%
atmospheres
6%
causes
5%
air
5%
pulses
4%
simulation
3%
Chemistry
Plasma
41%
Dose
34%
Energy
31%
Ion
26%
Annealing
26%
Implant
22%
Oxide
18%
Depth Profiling
14%
Sheet Resistance
13%
Sublimation
12%
Microelectronics
12%
Etching
10%
Doping Material
9%
Industry
8%
Simulation
7%
Surface
3%
Application
3%