Characterization of the Segregation of Arsenic at the Interface SiO 2/Si

Christian Steen; Peter Pichler; Heiner Ryssel; Lirong Pei; Gerd Duscher; Matt Werner; Jaap A. Van Den Berg; Wolfgang Windl

doi:10.1557/PROC-0994-F08-02

Characterization of the Segregation of Arsenic at the Interface SiO ₂/Si

Christian Steen, Peter Pichler, Heiner Ryssel, Lirong Pei, Gerd Duscher, Matt Werner, Jaap A. Van Den Berg, Wolfgang Windl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

The segregation of As atoms at the Si/SiO₂ interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·10¹² cm ^-2 to 1·10¹⁶ cm^-2. The samples were annealed at 900°C and 1000°C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

Original language	English
Title of host publication	Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Editors	S. Ashok, J. Chevallier, P. Kiesel, T. Ogino
Publisher	Materials Research Society
Number of pages	6
Volume	994
ISBN (Print)	9781558999541, 9781107408692
DOIs	https://doi.org/10.1557/PROC-0994-F08-02
Publication status	Published - 2007
Externally published	Yes
Event	Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, United States Duration: 9 Apr 2007 → 13 Apr 2007 Conference number: 2

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	994
ISSN (Print)	0272-9172

Conference

Conference	Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Country/Territory	United States
City	San Francisco
Period	9/04/07 → 13/04/07

Access to Document

10.1557/PROC-0994-F08-02Licence: Unspecified

Cite this

Steen, C., Pichler, P., Ryssel, H., Pei, L., Duscher, G., Werner, M., Van Den Berg, J. A., & Windl, W. (2007). Characterization of the Segregation of Arsenic at the Interface SiO ₂/Si. In S. Ashok, J. Chevallier, P. Kiesel, & T. Ogino (Eds.), Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II (Vol. 994). [0994-F08-02] (Materials Research Society Symposium Proceedings; Vol. 994). Materials Research Society. https://doi.org/10.1557/PROC-0994-F08-02

Steen, Christian ; Pichler, Peter ; Ryssel, Heiner et al. / Characterization of the Segregation of Arsenic at the Interface SiO ₂/Si. Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. editor / S. Ashok ; J. Chevallier ; P. Kiesel ; T. Ogino. Vol. 994 Materials Research Society, 2007. (Materials Research Society Symposium Proceedings).

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title = "Characterization of the Segregation of Arsenic at the Interface SiO 2/Si",

abstract = "The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·1012 cm -2 to 1·1016 cm-2. The samples were annealed at 900°C and 1000°C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.",

keywords = "Arsenic, Defect structures, Electric conductivity, Pigments, Segregation (metallography), Semiconductor devices, Silicon compounds, Technology, Semiconductor materials, defects, si, storage",

author = "Christian Steen and Peter Pichler and Heiner Ryssel and Lirong Pei and Gerd Duscher and Matt Werner and {Van Den Berg}, {Jaap A.} and Wolfgang Windl",

year = "2007",

doi = "10.1557/PROC-0994-F08-02",

language = "English",

isbn = "9781558999541",

volume = "994",

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booktitle = "Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II",

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note = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II ; Conference date: 09-04-2007 Through 13-04-2007",

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Steen, C, Pichler, P, Ryssel, H, Pei, L, Duscher, G, Werner, M, Van Den Berg, JA & Windl, W 2007, Characterization of the Segregation of Arsenic at the Interface SiO ₂/Si. in S Ashok, J Chevallier, P Kiesel & T Ogino (eds), Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. vol. 994, 0994-F08-02, Materials Research Society Symposium Proceedings, vol. 994, Materials Research Society, Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, San Francisco, California, United States, 9/04/07. https://doi.org/10.1557/PROC-0994-F08-02

Characterization of the Segregation of Arsenic at the Interface SiO ₂/Si. / Steen, Christian; Pichler, Peter; Ryssel, Heiner et al.

Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. ed. / S. Ashok; J. Chevallier; P. Kiesel; T. Ogino. Vol. 994 Materials Research Society, 2007. 0994-F08-02 (Materials Research Society Symposium Proceedings; Vol. 994).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Steen, Christian

AU - Pichler, Peter

AU - Ryssel, Heiner

AU - Pei, Lirong

AU - Duscher, Gerd

AU - Werner, Matt

AU - Van Den Berg, Jaap A.

AU - Windl, Wolfgang

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PY - 2007

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N2 - The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·1012 cm -2 to 1·1016 cm-2. The samples were annealed at 900°C and 1000°C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

AB - The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·1012 cm -2 to 1·1016 cm-2. The samples were annealed at 900°C and 1000°C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

KW - Arsenic

KW - Defect structures

KW - Electric conductivity

KW - Pigments

KW - Segregation (metallography)

KW - Semiconductor devices

KW - Silicon compounds

KW - Technology

KW - Semiconductor materials

KW - defects

KW - si

KW - storage

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SN - 9781107408692

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BT - Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II

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Y2 - 9 April 2007 through 13 April 2007

ER -

Steen C, Pichler P, Ryssel H, Pei L, Duscher G, Werner M et al. Characterization of the Segregation of Arsenic at the Interface SiO ₂/Si. In Ashok S, Chevallier J, Kiesel P, Ogino T, editors, Symposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. Vol. 994. Materials Research Society. 2007. 0994-F08-02. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-0994-F08-02