Characterization of the Segregation of Arsenic at the Interface SiO 2/Si

Christian Steen, Peter Pichler, Heiner Ryssel, Lirong Pei, Gerd Duscher, Matt Werner, Jaap A. Van Den Berg, Wolfgang Windl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·1012 cm -2 to 1·1016 cm-2. The samples were annealed at 900°C and 1000°C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

Original languageEnglish
Title of host publicationSymposium F - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
EditorsS. Ashok, J. Chevallier, P. Kiesel, T. Ogino
PublisherMaterials Research Society
Number of pages6
Volume994
ISBN (Print)9781558999541, 9781107408692
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, United States
Duration: 9 Apr 200713 Apr 2007
Conference number: 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume994
ISSN (Print)0272-9172

Conference

ConferenceSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
CountryUnited States
CitySan Francisco
Period9/04/0713/04/07

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