The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Jan 2000|
Collart, E. J. H., Murrell, A. J., Foad, M. A., Van Den Berg, J. A., Zhang, S., Armour, D., Goldberg, R. D., Wang, T. S., Cullis, A. G., Clarysse, T., & Vandervorst, W. (2000). Cluster formation during annealing of ultra-low-energy boron-implanted silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(1), 435-439. https://doi.org/10.1116/1.591207