Cluster formation during annealing of ultra-low-energy boron-implanted silicon

E. J.H. Collart, A. J. Murrell, M. A. Foad, J. A. Van Den Berg, S. Zhang, D. Armour, R. D. Goldberg, T. S. Wang, A. G. Cullis, T. Clarysse, W. Vandervorst

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.
Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 2000
Externally publishedYes

Fingerprint

Boron
boron
Annealing
Silicon
annealing
Ions
ion scattering
silicon
Secondary ion mass spectrometry
profiles
secondary ion mass spectrometry
Chemical activation
activation
Scattering
dosage
energy
probes
ions

Cite this

Collart, E. J.H. ; Murrell, A. J. ; Foad, M. A. ; Van Den Berg, J. A. ; Zhang, S. ; Armour, D. ; Goldberg, R. D. ; Wang, T. S. ; Cullis, A. G. ; Clarysse, T. ; Vandervorst, W. / Cluster formation during annealing of ultra-low-energy boron-implanted silicon. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 1. pp. 435-439.
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abstract = "The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.",
author = "Collart, {E. J.H.} and Murrell, {A. J.} and Foad, {M. A.} and {Van Den Berg}, {J. A.} and S. Zhang and D. Armour and Goldberg, {R. D.} and Wang, {T. S.} and Cullis, {A. G.} and T. Clarysse and W. Vandervorst",
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language = "English",
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Collart, EJH, Murrell, AJ, Foad, MA, Van Den Berg, JA, Zhang, S, Armour, D, Goldberg, RD, Wang, TS, Cullis, AG, Clarysse, T & Vandervorst, W 2000, 'Cluster formation during annealing of ultra-low-energy boron-implanted silicon', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 1, pp. 435-439. https://doi.org/10.1116/1.591207

Cluster formation during annealing of ultra-low-energy boron-implanted silicon. / Collart, E. J.H.; Murrell, A. J.; Foad, M. A.; Van Den Berg, J. A.; Zhang, S.; Armour, D.; Goldberg, R. D.; Wang, T. S.; Cullis, A. G.; Clarysse, T.; Vandervorst, W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 1, 01.2000, p. 435-439.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cluster formation during annealing of ultra-low-energy boron-implanted silicon

AU - Collart, E. J.H.

AU - Murrell, A. J.

AU - Foad, M. A.

AU - Van Den Berg, J. A.

AU - Zhang, S.

AU - Armour, D.

AU - Goldberg, R. D.

AU - Wang, T. S.

AU - Cullis, A. G.

AU - Clarysse, T.

AU - Vandervorst, W.

PY - 2000/1

Y1 - 2000/1

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AB - The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.

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U2 - 10.1116/1.591207

DO - 10.1116/1.591207

M3 - Article

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