Cluster formation during annealing of ultra-low-energy boron-implanted silicon

E. J.H. Collart; A. J. Murrell; M. A. Foad; J. A. Van Den Berg; S. Zhang; D. Armour; R. D. Goldberg; T. S. Wang; A. G. Cullis; T. Clarysse; W. Vandervorst

doi:10.1116/1.591207

Cluster formation during annealing of ultra-low-energy boron-implanted silicon

E. J.H. Collart, A. J. Murrell, M. A. Foad, J. A. Van Den Berg, S. Zhang, D. Armour, R. D. Goldberg, T. S. Wang, A. G. Cullis, T. Clarysse, W. Vandervorst

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×10¹⁵ and 5×10¹⁵cm⁻²were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.

Original language	English
Pages (from-to)	435-439
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591207
Publication status	Published - Jan 2000
Externally published	Yes

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Collart, E. J. H., Murrell, A. J., Foad, M. A., Van Den Berg, J. A., Zhang, S., Armour, D., Goldberg, R. D., Wang, T. S., Cullis, A. G., Clarysse, T., & Vandervorst, W. (2000). Cluster formation during annealing of ultra-low-energy boron-implanted silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18(1), 435-439. https://doi.org/10.1116/1.591207

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abstract = "The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.",

author = "Collart, {E. J.H.} and Murrell, {A. J.} and Foad, {M. A.} and {Van Den Berg}, {J. A.} and S. Zhang and D. Armour and Goldberg, {R. D.} and Wang, {T. S.} and Cullis, {A. G.} and T. Clarysse and W. Vandervorst",

year = "2000",

month = jan,

doi = "10.1116/1.591207",

language = "English",

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Collart, EJH, Murrell, AJ, Foad, MA, Van Den Berg, JA, Zhang, S, Armour, D, Goldberg, RD, Wang, TS, Cullis, AG, Clarysse, T & Vandervorst, W 2000, 'Cluster formation during annealing of ultra-low-energy boron-implanted silicon', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 1, pp. 435-439. https://doi.org/10.1116/1.591207

TY - JOUR

T1 - Cluster formation during annealing of ultra-low-energy boron-implanted silicon

AU - Collart, E. J.H.

AU - Murrell, A. J.

AU - Foad, M. A.

AU - Van Den Berg, J. A.

AU - Zhang, S.

AU - Armour, D.

AU - Goldberg, R. D.

AU - Wang, T. S.

AU - Cullis, A. G.

AU - Clarysse, T.

AU - Vandervorst, W.

PY - 2000/1

Y1 - 2000/1

N2 - The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.

AB - The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.

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EP - 439

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 2166-2746

IS - 1

ER -

Cluster formation during annealing of ultra-low-energy boron-implanted silicon

Abstract

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