Cluster formation during annealing of ultra-low-energy boron-implanted silicon

E. J.H. Collart, A. J. Murrell, M. A. Foad, J. A. Van Den Berg, S. Zhang, D. Armour, R. D. Goldberg, T. S. Wang, A. G. Cullis, T. Clarysse, W. Vandervorst

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Abstract

The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boronimplantations at doses of 1×1015 and 5×1015cm−2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.
Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 2000
Externally publishedYes

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